Long-wave infrared InAs0.6Sb0.4 photodiodes grown onto n-InAs substrates

Klimov, A. A.; Kunkov, R. E.; Lavrov, A. A.; Lebedeva, Nadezhda; Lukhmyrina, T C; Matveev, B. A.; Remennyi, M. A.

doi:10.1088/1742-6596/1851/1/012019

Cited by 3 publications

(1 citation statement)

References 8 publications

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“…В настоящее время арсенид индия и узкозонные материалы на его основе широко применяются в оптоэлектронике для создания лазеров [1,2], светодиодов [3,4] и фотоприемников [5,6]. Данные приборы работают при комнатной температуре и неглубоком охлаждении в средней и дальней ИК областях, актуальных для фундаментальных и прикладных задач.…”

Section: Introductionunclassified

Геттерирование Эпитаксиального Арсенида Индия Редкоземельным Элементом Гольмием

Куницына¹,

Пархоменко²,

Пивоварова³

et al. 2023

Физика И Техника Полупроводников

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The results of a study of the galvanomagnetic properties of indium arsenide grown by liquid-phase epitaxy are presented. It is shown that the use of the rare earth element holmium in the growth of InAs epitaxial layers makes it possible to reduce the electron concentration by two orders of magnitude to n=2.1•1015 cm−3 at T=77 K. This effect is due to the gettering of shallow background impurities with the formation of their compounds in the melt. With an increase in the holmium content of more than 0.12 mol.% the concentration of current carriers in the material begins to increase, while mobility decreases due to the influence of VAs – Ho donor centers. This method of gettering is promising for obtaining AIIIBV materials with a low concentration of current carriers, which are in demand in the optoelectronic industry.

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Section: Introductionunclassified

Геттерирование Эпитаксиального Арсенида Индия Редкоземельным Элементом Гольмием

Куницына¹,

Пархоменко²,

Пивоварова³

et al. 2023

Физика И Техника Полупроводников

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MBE growth of In0.53Ga0.47Sb on In0.53Ga0.47As/InP substrates using the interfacial misfit dislocation arrays

Ince

Frost

Seth

et al. 2023

Journal of Vacuum Science &Amp; Technology A

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We present the growth of highly relaxed In0.53Ga0.47Sb buffers on In0.53Ga0.47As/InP by inducing a periodic array of interfacial misfit dislocation arrays at the In0.53Ga0.47Sb/ In0.53Ga0.47As interface. The periodic 90° misfit dislocation array is realized through As for Sb anion exchange while keeping the group III sublattice the same. Transmission electron microscopy (TEM) results show the presence of misfit dislocations with a periodicity of 6.16 nm, which corresponds to 14 In0.53Ga0.47Sb lattice sites or 15 In0.53Ga0.47As lattice sites. The In0.53Ga0.47Sb epilayer, however, is affected by phase segregation as evidenced by both TEM and Nomarski optical phase microscopy. The x ray based reciprocal space mapping indicates relaxation to be 99.5% for the In0.53Ga0.47Sb epilayer.

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