N-InAsSbP/InAs/P-InAsSbP double heterostructures have been grown onto n+-InAs substrate and further processed into 2×2 photodiode array containing no n+-InAs. C-V, spectral response as well as mid-IR photoluminescence and electroluminescence in the 77-300 K temperature range have been measured and used for photodiode characterization including D*(λ) and BLIP temperature evaluation.

The results of a study of multilayer photodiodes based on InAs1- x Sb x solid solutions (0.3 < x <0.4), with a long-wavelength cut-off of λ 0.1 ≈ 11 μm at room temperature are presented. The current-voltage and spectral characteristics of photosensitivity and electroluminescence were analyzed in the temperature range of 80 ÷ 300 K. Experimental samples of photodetectors are characterized by a quantum efficiency of 0.23 at 150 K and a diffusion mechanism of current flow at least in the 200-300 K range. The detectivity of the immersion lens PD at the maximum has values of at least D*8 µm = 8·108 and D* 5.5 µm = 1010 cm·Hz1/2W-1 at 300 and 150 K, respectively.

Three main reasons for a temperature increase in activated p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/ n-InAsSb/n-InAs double heterostructures has been considered, contribution of nonradiative Auger recombination, electron-phonon interaction and Joule heating to diode temperature increase in single element LEDs and flip-chip diode arrays (1x3) were evaluated at forward and reverse bias using data on spatial distribution of the mid-IR radiation intensity and current-voltage characteristics. Keywords: IR LED, IR diode array, Joule heating, Auger recombination, electron-phonon interaction.

Narrow gap heterostructures consisting of two double heterostructures (N-InAsSbP/n-InAs/P-InAsSbP and P-InAsSbP/n-InAs0.9Sb0.1/N-InAsSbP) grown sequentially onto a n+-InAs substrate and further processed into a two-color photodiode with individual sensing operation at 3.3 and 4 have been studied. Presented and discussed are the photodiode construction details, I-V characteristics as well as sensitivity and detectivity spectra measured at room temperature.

The results of a study of multilayer p-n heterostructures based on InAsSbx solid solution (0.3 ˂ x ˂0.35), with a long-wavelength photosensitivity boundary of λ0.1 ≈ 9.5 μm at room temperature are presented. The current-voltage and spectral characteristics of photosensitivity and electroluminescence were analyzed in the temperature range 80 ÷ 300 K. It is shown that the photoelectric properties are determined by the diffusion mechanism of current flow, and experimental samples of photodetectors are characterized by a quantum efficiency of Si ⩾ 1 A / W.