Photoelectric properties of heterostructures based on InAsSb_x solid solutions (0.3 ˂x ˂0.35)

Abstract

The results of a study of multilayer p-n heterostructures based on InAsSbx solid solution (0.3 ˂ x ˂0.35), with a long-wavelength photosensitivity boundary of λ0.1 ≈ 9.5 μm at room temperature are presented. The current-voltage and spectral characteristics of photosensitivity and electroluminescence were analyzed in the temperature range 80 ÷ 300 K. It is shown that the photoelectric properties are determined by the diffusion mechanism of current flow, and experimental samples of photodetectors are characterized by a quantum efficiency of Si ⩾ 1 A / W.