Long-wavelength (1.0–1.6 μm)In0.52Al0.48As/ In0.53(Ga<i>x</i>Al1−<i>x</i>)0.47As/In0.53Ga0.47As metal-semiconductor-metal photodetector

Griem, H.T.; Ray, Sayan Kumar; Freeman, James L.; West, David L.

doi:10.1063/1.102567

Cited by 46 publications

(8 citation statements)

References 2 publications

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“…In an undoped Ill-V semiconductor, the Shockley-Read-Hall mechanism21 may dominate the carrier generation process of a reverse-biased p-n junction diode. Therefore, by applying this model, the generation lifetime in the i-region of an In04Ga0.6As p-i-n photodiode for a single-level generation center, can be expressed as 1 ET-E 1 ET-E T9 = c7PVhNT kT + avN kT (3) where ET is the trap energy level in the i-region of the diode, NT is the corresponding electron trap densities, o is the capture cross section of electron, o, is the capture cross section of hole, Vth is the electron saturation velocity, and E is the mid-gap level in the In04Ga06As photodiode. Since o, NT and ET can be obtained from the DLTS measurements, by assuming o=o the average generation lifetime can be determined.…”

Section: Generation Lifetime and Deep Level Defectsmentioning

confidence: 99%

<title>Development of a high-performance In0.4Ga0.6As photodiode on GaAs substrate for 1.3-um wavelength detection</title>

Tzeng

1992

SPIE Proceedings

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We described the successful development of a planar, low dark current, and high sensitivity 1n0•4 Ga0•6As p-i-n photodiode fabricated on a semi-insulating GaAs substrate with the aid of a multistage strain-relief buffer system. Without using surface passivation and antireflection coatings, the detector has a quantum efficiency of 42 % and a peak responsivity of 0.45 A/W at 1.3 jm wavelength. The reverse leakage current for the mesa-etched photodiode with an active area of 2 x iO cm2 is 5 x iO A at -5 V, and the breakdown voltage exceeds 25 V. To further study the quality of the p-i-n photodiode prepared on the lattice mismatched Ino.4Gao.eAs/GaAs material system, the generation lifetime profile in the i-region of the photodiode has been determined by using a differential current-voltage (I-V) and capacitance-voltage (C-V) technique. In addition, the generation lifetime and deep-level defects in these p-i-n photodiodes were also determined by the deep-level transient spectroscopy (DLTS) measurements.

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Section: Generation Lifetime and Deep Level Defectsmentioning

confidence: 99%

<title>Development of a high-performance In0.4Ga0.6As photodiode on GaAs substrate for 1.3-um wavelength detection</title>

Tzeng

1992

SPIE Proceedings

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“…4 The graded In 0.53 (Ga x Al 1Ϫx ) 0.47 As layer is introduced between the InGaAs/ AlInAs interface of long wavelength MSM photodetectors to enhance the responsivity. 5 Antireflection coating is used to avoid incident light loss. 6 The back illumination technique is used to get a higher responsivity.…”

Section: Introductionmentioning

confidence: 99%

Low temperature deposition for high performance photodetector

2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inOxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors Appl. Phys. Lett. 105, 023507 (2014); 10.1063/1.4890524 Low-temperature grown GaAs heterojunction metal-semiconductor-metal photodetectors improve speed and efficiency Appl. Phys. Lett. 99, 203502 (2011); 10.1063/1.3662392 Metal-semiconductor-metal photodetectors based on single-walled carbon nanotube film-GaAs Schottky contactsTi O 2 based metal-semiconductor-metal ultraviolet photodetectors Thin metal films are of considerable interest for optoelectronic device fabrication. The high resistivity of thin metal films results in drawbacks of their application in the devices. The low Schottky barrier height for certain important material such as InGaAs blocks its application in optoelectronic device at long wavelength. Recent studies have been conducted in low temperature ͑LT͒ deposition of thin metal films. The LT thin films showed 4-5 orders lower resistivity compared to those formed at room temperature. The LT process also results in increased Schottky barrier height for most III-V semiconductor materials. Therefore, the LT processed thin films show superior properties for optoelectronic devices applications. In this work, computer simulation was conducted by partially implementing the LT results in device parameters. The optimum design for the high performance metal-semiconductor-metal photodetector was obtained by simulation. The results show that the LT processing is of convenient, cost-effective, and could be implemented in more optoelectronic device fabrications.

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“…Initially, thin strained layers of GaAs and AlGaAs were used to create a higher Schottky barrier on InGaAs, which resulted in high leakage currents and low gains due to a significant trap density [43,44]. Later, thin layers of undoped InAlAs were used for barrier enhancement, which significantly improved the device performance due to the latticematching between InAlAs and the InP substrate [45,46]. Kim et al reported a back-illuminated InGaAs MSM PD with a record responsivity of 0.96 A/W and 92% QE at 5 V bias, although the bandwidth is only 4 GHz [47].…”

Section: In X Ga 1−x As Pdsmentioning

confidence: 99%

State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength

2015

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Photodetectors hold a critical position in optoelectronic integrated circuits, and they convert light into electricity. Over the past decades, high-performance photodetectors (PDs) have been aggressively pursued to enable high-speed, large-bandwidth, and low-noise communication applications. Various material systems have been explored and different structures designed to improve photodetection capability as well as compatibility with CMOS circuits. In this paper, we review state-of-theart photodetection technologies in the telecommunications spectrum based on different material systems, including traditional semiconductors such as InGaAs, Si, Ge and HgCdTe, as well as recently developed systems such as low-dimensional materials (e.g. graphene, carbon nanotube, etc.) and noble metal plasmons. The corresponding material properties, fundamental mechanisms, fabrication, theoretical modelling and performance of the typical PDs are presented, including the emerging directions and perspectives of the PDs for optoelectronic integration applications are discussed.

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Long-wavelength (1.0–1.6 μm)In0.52Al0.48As/ In0.53(GaxAl1−x)0.47As/In0.53Ga0.47As metal-semiconductor-metal photodetector

Cited by 46 publications

References 2 publications

<title>Development of a high-performance In0.4Ga0.6As photodiode on GaAs substrate for 1.3-um wavelength detection</title>

<title>Development of a high-performance In0.4Ga0.6As photodiode on GaAs substrate for 1.3-um wavelength detection</title>

Low temperature deposition for high performance photodetector

State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength

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