State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength

Eng, Png Ching; Sun, Su-Qin; Bai, Peng

doi:10.1515/nanoph-2015-0012

Cited by 93 publications

(57 citation statements)

References 241 publications

(322 reference statements)

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“…As stated above, SWIR light is free to transit through the wide‐bandgap InP layers and reach the thick enough In 0.53 Ga 0.47 As film (≈1.5 µm, equivalent to the penetration depth of SWIR light), which makes sure that most of SWIR photons are absorbed there. This character together with the surface‐antireflection‐coating design results in an external quantum efficiency over 80% . And the responsivity and detectivity are reported to as high as 1.2 A W −1 and 3.0 × 10 12 cm Hz 1/2 W −1 .…”

Section: Bulk Materials In Sensing Of Ir Photon At Room Temperaturementioning

confidence: 99%

Sensing Infrared Photons at Room Temperature: From Bulk Materials to Atomic Layers

Wang

Xia

et al. 2019

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109

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Room-temperature operating means a profound reduction of volume, power consumption, and cost for infrared (IR) photodetectors, which promise a wide range of applications in both military and civilian areas, including individual soldier equipment, automatic driving, etc. Inspired by this fact, since the beginning of 1990s, great efforts have been made in the development of uncooled thermal detectors. During the last two decades, similar efforts have been devoted using IR photon detectors, especially based on photovoltaic effects. Herein, the proven technologies, which have been commercialized with a large format, like InGaAs/InP pin diodes, InAsSb barrier detectors, and high-operating-temperature HgCdTe devices, are reviewed. The newly developed technology is emphasized, which has shown unique superiority in detecting mid-wavelength and long-wavelength IR signals, such as quantum cascade photodetectors. Finally, brand-new concept devices based on 2D materials are introduced, which are demonstrated to provide additional degrees of freedom in designing and fabricating room-temperature IR devices, for example, the construction of multi-heterojunctions without introducing lattice strain, the convenient integration of optical waveguides and electronic gratings. All information provided here aims to supply a full view of the progress and challenges of room-temperature IR detectors.has its own IR radiation characteristic which contains a wealth of information. For thousands of years, people have studied the visible light as the sensory spectrum of the human eye is only 380-740 nm. But for the invisible IR, people did not know it until the British astronomer Herschel discovered it with a blackened mercury thermometer over 200 years ago, since then the IR technology had developed slowly because people were not aware of the importance of IR in the next 100 years. [1,2] During World War II, PbS IR detectors for the first time were applied on battleships as a "top-secret" instrument, thus people began to focus research on IR technology. In comparison with visible, IR technology has unique characteristics:better environmental adaptability, stronger anti-interference ability, and higher resolution capability. With advantages of working at night or in harsh weather, transmitting information securely, and identifying the camouflaged target accurately, the IR detectors have been researched and widely applied in military, national defense, bioscience, and other momentous fields. [3][4][5] In the historical development of IR photo detectors, the response spectral is being extended to longer wavelengths; the pixels of imaging have been expanded from single element to tens of millions; the operating temperatures of cooled IR detectors are being increased to be closer to room temperature. [6][7][8] Nowadays, the remote IR imaging becomes clearer; the noise-equivalent temperature difference (NETD) of IR detection systems can reach 10 mK [9] or even lower; and IR detection systems become more and more integrated. [10] However, most high-...

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Section: Bulk Materials In Sensing Of Ir Photon At Room Temperaturementioning

confidence: 99%

Sensing Infrared Photons at Room Temperature: From Bulk Materials to Atomic Layers

Wang

Xia

et al. 2019

Small

109

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“…Nowadays, the detection of different technologically crucial wavelength regions is implemented by separate photosensitive semiconductors with appropriate bandgaps. For example, Si, Ge, and InGaAs are the most promising and commercialized semiconductors for sensing in the NIR regimes while the detection of MIR regimes generally relies on narrow bandgap semiconductor compounds such as PbS, PbSe, and HgCdTe . With regard to FIR detection, thermal sensing techniques are commonly utilized .…”

Section: Introductionmentioning

confidence: 99%

“…With regard to FIR detection, thermal sensing techniques are commonly utilized . Despite the maturity of conventional IR photodetectors, there are still many challenges for large‐scale deployment . For example, InGaAs/HgCdTe products bear both expensive fabricating process (e.g., molecular beam epitaxy) and harsh operating conditions (e.g., low temperature) .…”

Section: Introductionmentioning

confidence: 99%

“…For example, InGaAs/HgCdTe products bear both expensive fabricating process (e.g., molecular beam epitaxy) and harsh operating conditions (e.g., low temperature) . The nocuous nature of Hg causes serious safety problems during the process of device fabrication . Besides, the miniaturization difficulty and low flexibility of conventional semiconductors hinder their specific applications in the field of bendable and flexible optoelectronics .…”

Section: Introductionmentioning

confidence: 99%

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2D Metal Chalcogenides for IR Photodetection

Wang

Zhang

Gao

et al. 2019

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151

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Infrared (IR) photodetectors are finding diverse applications in imaging, information communication, military, etc. 2D metal chalcogenides (2DMCs) have attracted increasing interest in view of their unique structures and extraordinary physical properties. They have demonstrated outstanding IR detection performance including high responsivity and detectivity, high on/off ratio, fast response rate, stable room temperature operability, and good mechanical flexibility, which has opened up a new prospect in next‐generation IR photodetectors. This Review presents a comprehensive summary of recent progress in advanced IR photodetectors based on 2DMCs. The rationale of the photodetectors containing photocurrent generation mechanisms and performance parameters are briefly introduced. The device performances of 2DMCs‐based IR photodetectors are also systematically summarized, and some representative achievements are highlighted as well. Finally, conclusions and outlooks are delivered as a guideline for this thriving field.

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“…Many photodetectors (PDs) for 1550nm have been proposed [1,[8][9][10]. For telecom and datacom applications, these typically rely on a waveguide configuration [11][12][13][14][15][16][17][18][19][20], in which optical confinement and guiding contribute to enhanced light absorption and photodetection.…”

Section: Introductionmentioning

confidence: 99%

Vertically Illuminated, Resonant Cavity Enhanced, Graphene–Silicon Schottky Photodetectors

et al. 2017

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We report vertically-illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the PDs are integrated with an optical cavity, resulting in multiple reflections at resonance, and enhanced absorption in graphene. Our devices have wavelength-dependent photoresponse with external (internal) responsivity∼20mA/W (0.25A/W). The spectral-selectivity may be further tuned by varying the cavity resonant wavelength. Our devices pave the way for developing high responsivity hybrid graphene-Si free-space illuminated PDs for free-space optical communications, coherence optical tomography and light-radars.

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State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength

Cited by 93 publications

References 241 publications

Sensing Infrared Photons at Room Temperature: From Bulk Materials to Atomic Layers

Sensing Infrared Photons at Room Temperature: From Bulk Materials to Atomic Layers

2D Metal Chalcogenides for IR Photodetection

Vertically Illuminated, Resonant Cavity Enhanced, Graphene–Silicon Schottky Photodetectors

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