Long-Wavelength GaInNAs Vertical-Cavity Surface-Emitting Laser With Buried Tunnel Junction

Onishi, Yutaka; Saga, Nobuhiro; Koyama, Kenji; Doi, H.; Ishizuka, Takashi; Yamada, Takashi; Fujii, Keiji; Mori, Hajime; Hashimoto, Jun; Shimazu, M.; Yamaguchi, Akira; Katsuyama, T.

doi:10.1109/jstqe.2008.2011495

Cited by 26 publications

(17 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Corresponding small-signal modulation bandwidths do not exceed 9 GHz and 7 GHz, respectively. Furthermore, GaInNAs-based 1.3 μm VCSELs grown on GaAs-substrate exhibit comparable static and dynamic device features [4].…”

Section: Introductionmentioning

confidence: 95%

1.3 μm High-Power Short-Cavity VCSELs for High-Speed Applications

Müller

Grasse

Saller

et al. 2012

Conference on Lasers and Electro-Optics 2012

View full text Add to dashboard Cite

Fig. 1 a) Sketch of VCSEL layout with indicated device elements and current confinement b,c) L-I-V curve, DQE, WPE, and Ith of a typical 6.5 μm VCSEL at various heat-sink temperatures d) spectra of same device at a bias of I DC = 10mA at various heat-sink temperatures.Abstract: InP-based 1.3μm VCSELs employing two dielectric DBRs are presented. Because of reduced internal losses in the DBRs, high slope-efficiencies above 70%, and output-powers of 4.8mW are reported. The same devices feature modulation bandwidths beyond 12GHz.

show abstract

Section: Introductionmentioning

confidence: 95%

1.3 μm High-Power Short-Cavity VCSELs for High-Speed Applications

Müller

Grasse

Saller

et al. 2012

Conference on Lasers and Electro-Optics 2012

View full text Add to dashboard Cite

show abstract

“…In order to provide light sources for typical transmission ranges of access networks, large efforts in developing high-speed VCSELs for the 1.3 µm and 1.55 µm wavebands have been made -with steady improvement [4]- [8]. While at 1.3 µm different device concepts including wafer-fusion [6], nitrogen containing quantum wells [9] and buried tunnel junction (BTJ) [7], [8] compete, just BTJ-VCSELs with novel short-cavity (SC) design show outstanding modulation bandwidths in the 1.55 µm waveband [4,5].…”

Section: Introductionmentioning

confidence: 99%

InP-based highspeed-VCSELs with novel short-cavity design for application in access networks

Amann

Müller

2010

2010 12th International Conference on Transparent Optical Networks

View full text Add to dashboard Cite

We present 1.55 µm BTJ short-cavity VCSELs for application in access networks. A detailed analysis of the modulation performance of these long-wavelength devices is given. Record high modulation bandwidths in excess of 16 GHz for temperatures up to 50°C and high parasitic cut-off frequencies of 23 GHz are extracted from S-parameter measurements. This excellent modulation performance is due to the applied high-speed layout and the novel short-cavity design, improving optical and electrical device properties at the same time. Strongly increased relaxation-resonance frequencies and a reduced photon lifetime as well as an increased intrinsic damping rate are reported for these short-cavity VCSELs.

show abstract

“…High-speed VCSELs with data-rates in excess of 20 Gb/s have been demonstrated recently in the 850-nm wavelength regime [1,2]. As the waveband around 850 nm is only suitable for short-reach interconnects, many efforts have been made to develop long-wavelength, high-speed VCSELs for metro-range links [3][4][5][6][7]. For the long-wavelength regime, approaches incorporating wafer-fusion [3], GaInNAs-based quantum-wells [4] or monolithic approaches on InP [5][6][7] have shown promising results with data-rates of 10-Gb/s.…”

Section: Introductionmentioning

confidence: 99%

“…As the waveband around 850 nm is only suitable for short-reach interconnects, many efforts have been made to develop long-wavelength, high-speed VCSELs for metro-range links [3][4][5][6][7]. For the long-wavelength regime, approaches incorporating wafer-fusion [3], GaInNAs-based quantum-wells [4] or monolithic approaches on InP [5][6][7] have shown promising results with data-rates of 10-Gb/s. The incorporation of a buried tunnel-junction (BTJ), enabling the replacement of p-by n-conducting material with lower electrical and optical losses, seems to be mandatory to achieve reasonable high-speed or high-temperature performance.…”

Section: Introductionmentioning

confidence: 99%

22-Gb/s Long Wavelength VCSELs

Hofmann¹,

Müller²,

Nadtochiy³

et al. 2009

Opt. Express

View full text Add to dashboard Cite

1.55-microm vertical cavity surface-emitting low-parasitic lasers show open eyes up to 22-Gb/s modulation speed. Uncooled error-free operation over a wide temperature range up to 85 degrees C under constant bias conditions is demonstrated at 12.5-Gb/s data rate. At these fixed bias conditions the laser characteristics are practically invariant with temperature. These are the highest data-rates reported from a long-wavelength VCSEL structure to date.

show abstract

Long-Wavelength GaInNAs Vertical-Cavity Surface-Emitting Laser With Buried Tunnel Junction

Cited by 26 publications

References 17 publications

1.3 μm High-Power Short-Cavity VCSELs for High-Speed Applications

1.3 μm High-Power Short-Cavity VCSELs for High-Speed Applications

InP-based highspeed-VCSELs with novel short-cavity design for application in access networks

22-Gb/s Long Wavelength VCSELs

Contact Info

Product

Resources

About