1.3 μm High-Power Short-Cavity VCSELs for High-Speed Applications

Abstract

Fig. 1 a) Sketch of VCSEL layout with indicated device elements and current confinement b,c) L-I-V curve, DQE, WPE, and Ith of a typical 6.5 μm VCSEL at various heat-sink temperatures d) spectra of same device at a bias of I DC = 10mA at various heat-sink temperatures.Abstract: InP-based 1.3μm VCSELs employing two dielectric DBRs are presented. Because of reduced internal losses in the DBRs, high slope-efficiencies above 70%, and output-powers of 4.8mW are reported. The same devices feature modulation bandwidths beyond 12GHz.

InP-based 1.3 μm and 1.55 μm short-cavity VCSELs suitable for telecom- and datacom-applications

“…Recently, we reported on the first 1.3 m InP-based VCSELs based on the short-cavity concept which in detail was introduced in [5] for 1.55 m VCSELs. First 1.3 m devices allowed small-signal modulation with bandwidths up to 12 GHz at 20°C [10]. The present work reviews the static and dynamic device performance of such 1.3 m SC-VCSELs and reports on improved up-to-date results.…”

20-Gbps 1300-nm range wafer-fused vertical-cavity surface-emitting lasers with InGaAs/InAlGaAs superlattice-based active region

“…By adjusting the strain in InAlGaAs-InP QWs and reducing the cavity photon lifetime, the −3-dB bandwidth can be enhanced up to 12 GHz; as a result, error-free data transmission at 25 Gbps more than 10 km SMF at 20°C was demonstrated 10 . However, a higher Al-content in InAlGaAs QWs is required to provide an efficient emission in the 1300-nm range due to enhanced nonradiative Shockley–Read–Hall recombination rate 11 . A possible solution involves the application of InGaAs QWs, although an efficient electroluminescence emission at 1300 nm, using InP-lattice-matched InGaAs QWs is hardly possible.…”

“…10 However, a higher Al-content in InAlGaAs QWs is required to provide an efficient emission in the 1300-nm range due to enhanced nonradiative Shockley-Read-Hall recombination rate. 11 A possible solution involves the application of InGaAs QWs, although an efficient electroluminescence emission at 1300 nm, using InP-lattice-matched InGaAs QWs is hardly possible. Alternatively, one can consider the option of a short-period InGaAs/InAlGaAs superlattice (SL) as an active region, where the energy minibands for charge carriers are formed over the entire thickness of the SL due to the splitting of the energy levels caused by tunneling interaction.…”

Reliability of 1310 nm Wafer Fused VCSELs

“…1310 nm VCSELs with InAlGaAs/InP quantum wells comprise tunnel junction injection of carriers in the active region and 2 distributed Bragg reflectors (DBRs). In recent designs these reflectors comprize one [3], or two [7] asgrown InAlGaAs/InP DBRs, one [3], or two dielectric DBRs [8] and two AlGaAs/GaAs wafer fused DBRs [1], [2]. AlGaAs/GaAs DBRs that proved very effective in shortwavelength VCSELs, are very well suited for 1310 nm devices because of higher refractive index contrast compared with asgrown InAlGaAs/InP DBRs and much better thermal conductivity compared with both as-grown and dielectric DBRs.…”