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In the present work we report on the optimization of MBE growth conditions and design of metamorphic In(Al)(Ga)As/GaAs heterostructures. This results in a strong decrease in the density of threading dislocations in the upper (active) layers and the improvement of surface morphology. Room-temperature mobility in metamorphic modulation-doped InGaAs/InAlAs heterostructures was 8100 cm2 V−1 s−1, which is comparable to that of InP-based structures and noticeably superior to pseudomorphic GaAs-based structures. InAs quantum dots formed in a metamorphic InGaAs matrix on a GaAs substrate were used for lasers with promising characteristics (emitting wavelengths of 1.46 µm, with threshold current densities of 1.4 kA cm−2).

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The 1300 nm range vertical-cavity surface-emitting lasers with the active region based on InGaAs/InGaAlAs superlattice are fabricated using molecular-beam epitaxy and the double wafer-fusion technique. Lasers with the buried tunnel junction diameter of 5 μm have shown singlemode CW operation with the output optical power of ∼6 mW at 20°C. Opened eye diagrams are observed up to 10 Gbps.

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