No abstract

InAs self-organized quantum dots inserted in InGaAs quantum well have been grown on GaAs substrates by molecular beam epitaxy. The lateral size of the InAs islands has been found to be approximately 1.5 times larger as compared to the InAs/GaAs case, whereas the island heights and surface densities were close in both cases. The quantum dot emission wavelength can be controllably changed from 1.1 to 1.3 μm by varying the composition of the InGaAs quantum well matrix. Photoluminescence at 1.33 μm from vertical optical microcavities containing the InAs/InGaAs quantum dot array was demonstrated.

Temperature invariant output slope efficiency and threshold current ͑T 0 = ϱ͒ in the temperature range of 5-75°C have been measured for 1.3 µm p-doped self-organized quantum dot lasers. Similar undoped quantum dot lasers exhibit T 0 = 69 K in the same temperature range. A self-consistent model has been employed to calculate the various radiative and nonradiative current components in p-doped and undoped lasers and to analyze the measured data. It is observed that Auger recombination in the dots plays an important role in determining the threshold current of the p-doped lasers.

No abstract