2004
DOI: 10.1063/1.1829158
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The role of Auger recombination in the temperature-dependent output characteristics (T=∞) of p-doped 1.3 μm quantum dot lasers

Abstract: Temperature invariant output slope efficiency and threshold current ͑T 0 = ϱ͒ in the temperature range of 5-75°C have been measured for 1.3 µm p-doped self-organized quantum dot lasers. Similar undoped quantum dot lasers exhibit T 0 = 69 K in the same temperature range. A self-consistent model has been employed to calculate the various radiative and nonradiative current components in p-doped and undoped lasers and to analyze the measured data. It is observed that Auger recombination in the dots plays an import… Show more

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Cited by 243 publications
(139 citation statements)
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“…The advantages of quantum dots over quantum wells are due to their unique density of states resulting from three-dimensional confinement of carriers [3]. Ultralow threshold current and high temperature stability has been demonstrated for 1.3 lm selfassembled quantum dot (QD) lasers by many research groups [4][5][6][7]. It is also proved that QD lasers would have a large modulation bandwidth due to the high differential gain of three dimensional confined QD states [8].…”
Section: Introductionmentioning
confidence: 99%
“…The advantages of quantum dots over quantum wells are due to their unique density of states resulting from three-dimensional confinement of carriers [3]. Ultralow threshold current and high temperature stability has been demonstrated for 1.3 lm selfassembled quantum dot (QD) lasers by many research groups [4][5][6][7]. It is also proved that QD lasers would have a large modulation bandwidth due to the high differential gain of three dimensional confined QD states [8].…”
Section: Introductionmentioning
confidence: 99%
“…The relation between temperature and Jleak was taken from [26]. In ideal QD lasers, Jrad should be temperature independent [6,27]. The calculated JSRH, JAuger and Jleak were plotted in Figure 8, where we have used representative values of the respective coefficients taken from the literature [26,28].…”
Section: Non-radiative Currentmentioning
confidence: 99%
“…31 We present here comprehensive experimental and theoretical studies on InP-based TI structures containing InAs quantum dashes (QDashes). These structures substantially differ from typical quantum dots since they are strongly elongated in [1][2][3][4][5][6][7][8][9][10] direction and hence they have a denser ladder of confined states. 32,33 In the considered design, QDashes are immersed in the InGaAlAs matrix, with the GS emission near 1.55 µm at room temperature (RT).…”
mentioning
confidence: 92%
“…lasers. Carefully designed TI structures make possible taking advantage of improved characteristics of a QD-based laser, such as lower threshold current, 1,2 better temperature stability [3][4][5] and wider spectral tunability, 6 while addressing the issue in QD lasers that hinders their performance, i.e. limited modulation rates due to considerable population of hot carriers occupying QD excited states and wetting layer states.…”
mentioning
confidence: 99%