Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE

Metamorphic growth of 1.25–1.29μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy

“…Shortly afterwards, metamorphic QD lasers emitting at 1.5 mm were reported [10]. For metamorphic QW lasers, Zhukov et al [11] from Ioffe Institute in Russia demonstrated the first laser operation at 1.28 mm using a thick uniform In 0.2 Ga 0.8 As buffer layer and a defect-reduction technique [13]. The threshold current density for a 100 Â 1000 mm 2 cavity was 5 kA/cm 2 .…”

“…We have shown that with a proper design and growth optimization, strong light emission at 1.3-1.6 mm can be realized from metamorphic InGaAs QWs [7,8]. Metamorphic lasers on GaAs have been reported, using both InAs QDs [9,10] and InGaAs QWs [11,12]. The first metamorphic QD lasers [9] were grown on step-graded InGaAsSb buffer layers and use stimulated emission at 1.3 mm from the first exited state.…”

Optimization of 1.3μm metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy

“…We demonstrate strong room temperature 1.3 mm emission in which the peak intensity is comparable with that from InAs QDs but stronger than that from high quality GaInNAs QWs at similar wavelengths, indicating that this method is promising for GaAs based 1.3 mm lasers. It should be noted that another type of metamorphic growth method using a thick, relaxed InGaAs bulk layer was proposed for laser applications recently [18,19]. Both 1.3 mm InGaAs QW [18] and 1.5 mm InAs QD lasers [19] on GaAs were demonstrated by this method, although the threshold current density is several kilo ampere per square centimeter.…”

“…It should be noted that another type of metamorphic growth method using a thick, relaxed InGaAs bulk layer was proposed for laser applications recently [18,19]. Both 1.3 mm InGaAs QW [18] and 1.5 mm InAs QD lasers [19] on GaAs were demonstrated by this method, although the threshold current density is several kilo ampere per square centimeter. Also the metamorphic method using a step graded buffer layer was employed to grow InAs quantum dashes on GaAs [20].…”

Room-temperature yellow–amber emission from InGaP quantum wells grown on an InGaP metamorphic buffer layer on GaP(100) substrates

“…Metamorphic devices have been produced from Si x Ge 1Àx /Si [3,4], In x Ga 1Àx As/GaAs [5][6][7], In x Ga 1Àx As/InP [8], and In x Ga 1Àx P/GaP [9,10]. Close to 100% strain relaxation and reduction in threading dislocation density to below the detection limit of plan-view transmission electron microscopy (TEM), 10 6 cm À2 , have been reported [7,10]. The demonstrated high efficiency of strain relaxation is related to the control of misfit dislocation (in-plane between substrate and epitaxial layer) formation rates in the material.…”