Long-wavelength Ge/sub x/Si/sub 1-x//Si heterojunction infrared detectors and 400*400-element imager arrays

Tsaur, B. Y.; Chen, C.K.; Marino, Susanne A.

doi:10.1109/55.82065

Cited by 71 publications

(20 citation statements)

References 9 publications

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“…Such a system has outperformed an IrSi detector with the same cutoff wavelength with regard to quantum efficiency and dark current. A 400 x 400 focal plane array has been fabricated giving good image quality [42] (Fig. 10c).…”

Section: Infrared Detectorsmentioning

confidence: 99%

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Silicon-germanium heterostructures ? advanced materials and devices for silicon technology

Whall

Parker

1995

J Mater Sci: Mater Electron

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The continuing massive investment in silicon technology and the unique physical and chemical properties of the Si-SiO2 system will ensure the dominance of silicon in microelectronics well into the 21st century. This momentum stimulates development of new materials which should further enhance the performance of silicon microelectronic circuitry. Such materials must, however, be compatible with silicon processing technologies. Major advances in silicon technology are now in prospect due to breakthroughs in molecular beam epitaxy (MBE) growth which have occurred over the last decade and which have enabled silicon to be alloyed to its nearest neighbours in the periodic table -Ge, C, and Sn. The Si/Sil _× Gex heteroepitaxial material system in particular is emerging as a strong candidate to form a silicon-based heterojunction technology. The incorporation of thin, strained, (pseudomorphic) layers of Sil _xGex in silicon allows significant valence band and conduction band edge misalignments to be realized along with appreciable reductions in bandgap energies. Bandgap engineering-such a powerful tool for modifying semiconducting properties (and previously the reserve of compound semiconductors) -thus becomes accessible to the mainstream microelectronics material. This review considers the dramatic impact SiGe could have on future silicon microelectronics.

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Section: Infrared Detectorsmentioning

confidence: 99%

“…The n + regions act as guard rings and define the active area of the device. Thermal image (X > 75 gin) of a man's face [42] obtained from a 400 x 400 array of such detectors, is shown in (c).…”

Section: Infrared Detectorsmentioning

confidence: 99%

Silicon-germanium heterostructures ? advanced materials and devices for silicon technology

Whall

Parker

1995

J Mater Sci: Mater Electron

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“…Arrays have been made using detectors with only a single p-Six-xGex/Si heterojunction, but the performance is only slightly better than IrSi Schottky barrier arrays [7]. In this laboratory we have undertaken a systematic study of p-Sil_xGex/Si detectors with multiple Sil-xGex QWs; these should have a more favourable escape probability for photoexcited carriers than the single heterojunction devices [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Si1?XGeX/Si quantum well infrared photodetectors

Robbins¹,

Stanaway²,

Leong³

et al. 1995

J Mater Sci: Mater Electron

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P-type Sil_xGe~/Si quantum well infrared photodetectors for thermal imaging applications have been grown by low pressure vapour phase epitaxy for the first time. Good control of periodicity in these pseudomorphic multiple quantum well structures on Si substrates was demonstrated by real-time ellipsometry during growth and subsequently confirmed by transmission electron microscopy. The photoresponse spectrum was tuned in the 8-13 gm waveband by varying the Ge fraction in the Sil_×Ge× quantum wells. ~ Dark currents were reduced by doping only the centre regions of the quantum wells.

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“…A Si-based QWIP offers the additional advantage of having the same thermal expansion coefficient as the Si readout electronics, an aspect which is essential for the realization of large detector arrays operating under low temperature conditions (T ≈ 80 K). Also a direct monolithic integration with MOS readout circuitry is possible [9]. Another promising detector concept with considerable quantum efficiencies, which should be mentioned in this context, is the single heterojunction SiGe/Si device, where the free-carrier absorption followed by internal photoemission over the heterojunction barrier is used for IR detection [9,10].…”

mentioning

confidence: 99%

“…Also a direct monolithic integration with MOS readout circuitry is possible [9]. Another promising detector concept with considerable quantum efficiencies, which should be mentioned in this context, is the single heterojunction SiGe/Si device, where the free-carrier absorption followed by internal photoemission over the heterojunction barrier is used for IR detection [9,10]. In this letter we report the results of our experimental and theoretical work on a bound-to-continuum Si 0.64 Ge 0.36 /Si QWIP operating between 3 and 8 µm.…”

mentioning

confidence: 99%

Polarization-dependent intersubband absorption and normal-incidence infrared detection in p-type Si/SiGe quantum wells

Kruck

Weichselbaum

Helm

et al. 1998

Superlattices and Microstructures

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A detailed study of the polarization dependence of subband absorption and photoconductivity in pseudomorphic p-type Si/Si 0.64 Ge 0.36 quantum wells is presented. The fabricated quantum well infrared photodetectors (QWIP) show a photoresponse between 3 and 8 µm with a peak-wavelength of λ p = 5 µm under normal incidence illumination. At the optimum bias operating point a detectivity D * λ = 2 × 10 10 cm √ Hz W −1 is achieved. On the basis of a self-consistent six-band Luttinger-Kohn calculation the p-and s-polarized intersubband transitions, leading to the observed photoconductivity, are identified. c 1998 Academic Press Limited Key words: Si/SiGe, intersubband absorption, infrared detector.Optical transitions between confined subbands in doped quantum wells have attracted much interest because they allow the realization of sensitive infrared detectors for the spectral range between 3 and 20 µm [1,2]. The high quantum efficiency and uniformity of the so-called quantum well infrared photodetectors (QWIP) makes them especially attractive for thermal imaging applications. Up to now most of the work has been concentrated on n-doped GaAs QWIPs where the superior transport of the photoexcited electrons above the barriers results in detectivities as high as D * λ ≥ 10 11 cm √ Hz W −1 . For this purpose optical couplers like gratings [3] or random scatterers [1] have been employed, which provide a component of the electric field parallel to the growth direction necessary for intersubband absorption in n-doped quantum wells due to the symmetry of the conduction band at the -point.In p-doped QW the restriction introduced by the quantum mechanical selection rule is removed due to the coupling of heavy-hole, light-hole and spin-orbit split-off subbands [4][5][6][7]. The desirable normal-incidence detection without optical couplers has been demonstrated in p-type GaAs [8] as well as p-type SiGe QWIPs [4,6]. A Si-based QWIP offers the additional advantage of having the same thermal expansion coefficient as the Si readout electronics, an aspect which is essential for the realization of large detector arrays operating under low temperature conditions (T ≈ 80 K). Also a direct monolithic integration with MOS readout circuitry is possible [9]. Another promising detector concept with considerable quantum efficiencies, which should be mentioned in this context, is the single heterojunction SiGe/Si device, where the free-carrier absorption

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Long-wavelength Ge/sub x/Si/sub 1-x//Si heterojunction infrared detectors and 400*400-element imager arrays

Cited by 71 publications

References 9 publications

Silicon-germanium heterostructures ? advanced materials and devices for silicon technology

Silicon-germanium heterostructures ? advanced materials and devices for silicon technology

Si1?XGeX/Si quantum well infrared photodetectors

Polarization-dependent intersubband absorption and normal-incidence infrared detection in p-type Si/SiGe quantum wells

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