Long-wavelength infrared focal plane arrays fabricated from HgCdTe grown on silicon substrates

Hall, D.; Buckle, L.; Gordon, Neil T.; Giess, J.; Hails, Janet E.; Cairns, J. W.; Lawrence, Rebecca; Graham, Andrew; Hall, R. S.; Maltby, Corinne; Ashley, T.

doi:10.1117/12.545003

Cited by 10 publications

(4 citation statements)

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“…The contacts to the device are taken using fan-out pads and the device is easily illuminated from the backside. An example of this method can be seen in the work of Hall et al [5] who used indium bump bonding and the flip-chip approach by using a Si readout chip consisting of a fan-out of metal tracks deposited on an insulating layer. Johnson et al [6] measured the photo-response of a MWIR 128 × 128 array grown on GaAs/Si/cadmium zinc telluride (CZT) using fan-out substrates in a cryogenic Dewar.…”

Section: (B) Flip Chip Methodsmentioning

confidence: 99%

Improved cold finger and chuck design of a cryo-prober for quantum efficiency measurement using backside illumination for HgCdTe IR diodes

Bhan¹,

Srivastava²,

Saxena³

et al. 2009

Meas. Sci. Technol.

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We present a low temperature 80 K cryo-prober methodology for measuring quantum efficiency (QE) in the backside illumination mode suitable for characterizing infrared (IR) detectors at the wafer level without using a readout integrated circuit (ROIC) or fan-out on chip carriers. The method involves the design of a specific device-mounting chuck in such a way that there is a gap beneath it, which is used for reflecting the incoming IR radiation from the side window to the top (or the backside of the device). Sample experimental results for HgCdTe IR diodes have been demonstrated using the said method.

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Section: (B) Flip Chip Methodsmentioning

confidence: 99%

Improved cold finger and chuck design of a cryo-prober for quantum efficiency measurement using backside illumination for HgCdTe IR diodes

Bhan¹,

Srivastava²,

Saxena³

et al. 2009

Meas. Sci. Technol.

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“…Alternatives to the current hybrid devices using direct growth of HgCdTe on silicon may offer cost and systems integration advantages (e.g. Hall et al 2004). Wavefront sensing at the same wavelength as the observing instrument has some advantages (Owner-Petersen & Goncharov 2004), but IR detectors with 5e noise at high readout rates of up to 500Hz need more development.…”

Section: Challenges: Detectorsmentioning

confidence: 99%

Novel technologies required to meet ELT science challenges

Cunningham¹,

Crampton

2005

Proc. IAU

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We review the need for technology developments to meet the science cases that have been assembled for optical and infrared telescopes from 20 to 100 metres. Novel technologies can make an impact on the scientific capabilities of these ELTs, make them more affordable and decrease the operating costs. We consider those technologies highlighted by design studies and technology roadmapping exercises on both sides of the Atlantic, with particular emphasis on instrumentation. We do not consider adaptive optics (AO), which is covered by Ellerbroek & Hubin (this volume). Finally, we recommend a joint technology development programme to enable a worldwide suite of ELTs to be built.

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“…In recent years, the requirement to reduce costs and the limitations from the maximum available sizes of traditional substrates, have driven the effort to develop MCT growth on silicon (Si) substrates. 1,2,3 Si wafers are cheap, robust and available in large sizes, but also do not require the substrate to be thinned or removed in order to prevent de-lamination when cooled to the detector operating temperatures. This is important because the yields of the thinning process can be low, particularly for larger die sizes.…”

Section: Introductionmentioning

confidence: 99%

“…6 MOVPE growth of MCT on II-VI buffered Si has shown promise and some excellent MW and LW detector arrays have been previously demonstrated. 1,2,3 In this paper, we review recent developments in QinetiQ's combined MBE and MOVPE MCT growth on silicon, including measurements of LW diodes. We also present an example of the exploitation of this material in the form of a small-format LW focal plane array (FPA) for high frame-rate applications.…”

Section: Introductionmentioning

confidence: 99%

Wide-band (2.5 - 10.5 Âµm), high-frame rate IRFPAs based on high-operability MCT on silicon

et al. 2010

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We have previously presented results from our mercury cadmium telluride (MCT, Hg 1-x Cd x Te) growth on silicon substrate technology for different applications, including negative luminescence, long waveband and mid/long dual waveband infrared imaging. In this paper, we review recent developments in QinetiQ's combined molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE) MCT growth on silicon; including MCT defect density, uniformity and reproducibility. We also present a new small-format (128 x 128) focal plane array (FPA) for high frame-rate applications.A custom high-speed readout integrated circuit (ROIC) was developed with a large pitch and large charge storage aimed at producing a very high performance FPA (NETD ~10mK) operating at frame rates up to 2kHz for the full array. The array design allows random addressing and this allows the maximum frame rate to be increased as the window size is reduced. A broadband (2.5-10.5 µm) MCT heterostructure was designed and grown by the MBE/MOVPE technique onto silicon substrates. FPAs were fabricated using our standard techniques; wet-etched mesa diodes passivated with epitaxial CdTe and flip-chip bonded to the ROIC.The resulting focal plane arrays were characterized at the maximum frame rate and shown to have the high operabilities and low NETD values characteristic of our LWIR MCT on silicon technology.

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Long-wavelength infrared focal plane arrays fabricated from HgCdTe grown on silicon substrates

Cited by 10 publications

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Improved cold finger and chuck design of a cryo-prober for quantum efficiency measurement using backside illumination for HgCdTe IR diodes

Improved cold finger and chuck design of a cryo-prober for quantum efficiency measurement using backside illumination for HgCdTe IR diodes

Novel technologies required to meet ELT science challenges

Wide-band (2.5 - 10.5 Âµm), high-frame rate IRFPAs based on high-operability MCT on silicon

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