Long-wavelength silicon photonic integrated circuits

Abstract

Abstract-In this paper we elaborate on our development of silicon photonic integrated circuits operating at wavelengths beyond the telecommunication wavelength window. Silicon-oninsulator waveguide circuits up to 3.8 µm wavelength are demonstrated as well as germanium-on-silicon waveguide circuits operating in the 5-5 µm wavelength range. The heterogeneous integration of III-V semiconductors and IV-VI semiconductors on this platform is described for the integration of lasers and photodetectors operating in the 2-3 µm wavelength range. GeSn is proposed as an appealing approach to monolithically integrated long-wavelength detectors. Finally, nonlinear optics in silicon waveguide circuits beyond the two-photon absorption threshold is explored.

Assessment of Parameters in Integrated Photonic Systems Through the Analysis of Interdependencies with the MICMAC Technique

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Design and characterization of Ge passive waveguide components on Ge-on-insulator wafer for mid-infrared photonics

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