Losses in GaAs microstrip

Goldfarb, M.; Platzker, A.

doi:10.1109/22.64580

Cited by 54 publications

(17 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…An accurate analysis of the attenuation constant in MMICs is complicated by the multidielectric-layer construction and complex metallization schemes used in typical GaAs MMIC technology. The attenuation constant of the microstrip lines are 5% to 10% more than the result shown by Goldfarb and Platzker [1], which is apparent due to the consideration of the polyimide and silicon-nitride layers over the microstrip. …”

Section: Resultsmentioning

confidence: 58%

“…These additional dielectric layers have a strong influence on the field distribution at microwave frequencies, thereby affecting the electrical parameters, namely, the effective dielectric constant eff , characteristic impedance Z 0 and the attenuation constant ␣ of the microstrip line. Goldfarb and Platzker [1] and Carroll and Chang [2] have characterized the microstrip line on GaAs substrate with a silicon-nitride layer up to 40 GHz; however, they did not place the polyimide and silicon-nitride layers on the top of the strip. Finlay and Jansen [3] also analysed the GaAs MMIC multidielectric microstrip line systematically using the spectral-domain technique (SDM), showing the variation of attenuation and effective dielectric constant for microstrip lines fabricated over 200-m GaAs substrate up to 24 GHz.…”

Section: Introductionmentioning

confidence: 98%

See 1 more Smart Citation

Modelling of GaAs-MMIC microstrip line up to 40 GHz

Thakur

Pandey

Kedar

et al. 2004

Int J RF and Microwave Comp Aid Eng

View full text Add to dashboard Cite

Modelling of MMIC multidielectric microstrip line on GaAs substrate for its precise characterization has been presented in this article. An accurate design database for the characteristic parameters of the microstrip line, namely, effective dielectric constant, characteristic impedance, and attenuation coefficient, has been generated using the spectral-domain method (SDM). The accuracy of the developed database for the frequency range 1 to 40 GHz has been verified with the experimental results. On-wafer measurements have been carried out to minimize the parasitic losses at the high frequencies and the effect of CPW-pads has been de-embedded from the measured S-parameters to obtained accurate characteristic parameters of the microstrip line. The theoretical and the measured values of the characteristic parameters of microstrip lines show good agreement within 1% to 2%. This work is expected to be useful in GaAs foundries for accurate MMIC-CAD modelling of microstrip lines up to 40 GHz.

show abstract

Section: Resultsmentioning

confidence: 58%

Section: Introductionmentioning

confidence: 98%

Modelling of GaAs-MMIC microstrip line up to 40 GHz

Thakur

Pandey

Kedar

et al. 2004

Int J RF and Microwave Comp Aid Eng

View full text Add to dashboard Cite

show abstract

“…The silicon LDMOS transistors were replaced with conductive metal blocks approximately the same size as the die. Replacing the die with highlyconductive metal blocks converts the package and matching networks into a high quality-factor (Q) resonator which is very sensitive to the performance of the individual circuit elements [10]. Measurement of a resonator of this type is necessary due to the inherent low loss of the MOS capacitor and bond wire elements.…”

Section: Resultsmentioning

confidence: 99%

Modeling techniques suitable for CAD-based design of internal matching networks of high-power RF/microwave transistors

Aaen¹,

Plá²,

Balanis³

2006

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

Abstract-A scalable and accurate simulation technique to be used for the computer-aided design of matching networks employed within high-power RF transistors is presented. A novel measurement methodology is developed and utilized during the validation of the proposed analysis approach. Appropriate segmentation techniques were developed, which are consistent with the design approach of the high power transistor, that take into account the overall complexity of the internal match of most modern RF high power transistors, while preserving important electromagnetic interactions. By being able to properly decouple the linear portion of the overall packaged transistor model, an objective accuracy assessment via the comparison of measured vs. simulated results of the internal matching network was accomplished. The level of accuracy obtained provides credence to the idea of a full CAD driven design process of the internal match of high-power RF transistors.

show abstract

“…The convergence analysis for the gold microstrip line using multilayers in Figure 3 showed the attenuation converged to 30.9 dB/m for four layers with a characteristic impedance of 48.7 a. Previous experiments at 20 GHz have measured the attenuation of evaporated microstrip at 53.7 dB/m [8]. The C A D program, LineCalc, gives an impedance of 48.9 fi for a microstrip of the same dimensions.…”

Section: Convergence Parametersmentioning

confidence: 96%

Full‐wave convergence analysis of microstrip transmission parameters

Carroll

Chang

1994

Int. J. Microw. Mill.‐Wave Comput.‐Aided Eng.

View full text Add to dashboard Cite

Full-wave electromagnetic simulators have enabled microwave designers to simulate complex geometries which sometimes cannot be done by conventional computer-aided design (CAD) nodal simulators. However, designers should pay close attention to how the numerical implementation of the full-wave analysis can affect the results of the electromagnetic simulation. This study uses various modeling parameters to determine the convergence of a GaAs microstrip's simulated transmission line characteristics. A commercially available program, Sonnet's "EM," was used for the analysis but the results can be generalized for any full-wave analysis. This article explores the limits of Sonnet as well as showing that a designer must use a convergence analysis to prove the validity of an electromagnetic simulation.

show abstract

Losses in GaAs microstrip

Cited by 54 publications

References 4 publications

Modelling of GaAs-MMIC microstrip line up to 40 GHz

Modelling of GaAs-MMIC microstrip line up to 40 GHz

Modeling techniques suitable for CAD-based design of internal matching networks of high-power RF/microwave transistors

Full‐wave convergence analysis of microstrip transmission parameters

Contact Info

Product

Resources

About