Lossless turn-off switching projection of lateral and vertical GaN power field-effect transistors

Guo, Zhibo; Hitchcock, Collin; Chow, T. Paul

doi:10.1002/pssa.201600820

Cited by 5 publications

(4 citation statements)

References 12 publications

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“…Therefore, the channel current ( I channel ) and I drain could be directly and separately measured using an oscilloscope and current probes. This method was different to the traditional simulation method [ 20 ], and the discrepancy between I channel and I drain could be visually observed. Although an extra parallel capacitor led to an increase in the measured I drain and I channel , this qualitative method could be used to assess the difference between these two currents, and, thereby, the cause of the discrepancy could be located.…”

Section: Background and Methodologymentioning

confidence: 99%

“…I drain decreases from i r to a low value because the current begins to divert from the HEMT device to D 1 . In this time interval, the drain voltage is in a state of resonance, while V gs decreases to ( V mr − V th ), and the device channel current reaches zero at t 10 [ 20 ]. Then, the t 9 – t 10 time interval and the power losses at this time interval ( P turn_off_cf ) can be written as follows:

During the t 10 – t 11 time interval, the device is turned off, but V drain ringing occurs due to the resonance between C oss and L stray .…”

Section: Modeling Of Switching Power Lossesmentioning

confidence: 99%

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An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices

Lei,

Liu,

Yang

et al. 2023

Micromachines

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In this work, we present an analytical model of dynamic power losses for enhancement-mode AlGaN/GaN high-electron-mobility transistor power devices (eGaN HEMTs). To build this new model, the dynamic on-resistance (Rdson) is first accurately extracted via our extraction circuit based on a double-diode isolation (DDI) method using a high operating frequency of up to 1 MHz and a large drain voltage of up to 600 V; thus, the unique problem of an increase in the dynamic Rdson is presented. Then, the impact of the current operation mode on the on/off transition time is evaluated via a dual-pulse-current-mode test (DPCT), including a discontinuous conduction mode (DCM) and a continuous conduction mode (CCM); thus, the transition time is revised for different current modes. Afterward, the discrepancy between the drain current and the real channel current is qualitative investigated using an external shunt capacitance (ESC) method; thus, the losses due to device parasitic capacitance are also taken into account. After these improvements, the dynamic model will be more compatible for eGaN HEMTs. Finally, the dynamic power losses calculated via this model are found to be in good agreement with the experimental results. Based on this model, we propose a superior solution with a quasi-resonant mode (QRM) to achieve lossless switching and accelerated switching speeds.

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Section: Background and Methodologymentioning

confidence: 99%

During the t 10 – t 11 time interval, the device is turned off, but V drain ringing occurs due to the resonance between C oss and L stray .…”

Section: Modeling Of Switching Power Lossesmentioning

confidence: 99%

An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices

Lei,

Liu,

Yang

et al. 2023

Micromachines

View full text Add to dashboard Cite

show abstract

“…Device-circuit mixed-mode simulations are used to predict switching waveforms, switching time and energy loss of 1 μm-channel devices, incorporating inductive or resistive load circuits (Fig. 2), which are two basic application scenarios of electric power circuits, 21) transferring power into heat or motion, respectively. 22) All component values are based on an on-state current of 10 A and a V DD matched to the device rating (600 or 1200 V).…”

Section: Experimental Methodsmentioning

confidence: 99%

Comparative performance evaluation of lateral and vertical GaN high-voltage power field-effect transistors

Guo

Hitchcock

Chow

2019

Jpn. J. Appl. Phys.

Self Cite

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We have evaluated specific on-state resistance (Ron,sp) and switching performance of various GaN power field-effect transistors (FETs) with 600 and 1200 V ratings using analytical calculation and numerical simulation. The normally-off GaN power FET family includes lateral p-GaN gate high electron mobility transistors (HEMTs), lateral metal-oxide-semiconductor (MOS) channel HEMTs, current aperture vertical electron transistors (CAVETs) and vertical U-shaped trench-gate MOS field-effect transistors (UMOSFETs). This study shows the advantages of vertical GaN power FETs over lateral GaN power HEMTs. These advantages include lower Ron,sp and smaller switching energy loss, especially at higher blocking voltages (1200 V). At 600 V, lateral P-GaN gate HEMTs are competitive with vertical power FETs. Vertical GaN CAVETs perform better than both lateral HEMTs and vertical UMOSFETs at both voltage ratings, benefiting from its lowest Ron*QG figure-of-merit.

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“…Idrain decreases from ir to a low value because the current begins to divert from the HEMT device to D1. In this time interval, the drain voltage is in a state of resonance, while Vgs decreases to (Vmr-Vth) and the device channel current reaches zero at t10 [30]. Then, the t9-t10 time interval and the power losses at this time interval (Pturn_off_cf) can be written by: As can be seen, Ptotal in Equation ( 39) is very different from that in Equation (1).…”

Section: Stage 4(s4) -Turn-off Transitionmentioning

confidence: 99%

An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices

Lei¹,

Liu²,

Zhang³

et al. 2023

Preprint

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In this work, we present an analytical model of dynamic power losses for enhancement-mode AlGaN/GaN high-electron-mobility transistor power devices (eGaN HEMTs). To build this new model, the dynamic on-resistance (Rdson) is first accurately extracted by our ex-traction circuit based on a double-diode isolation (DDI) method for a high operating frequency up to 1 MHz and a large drain voltage up to 600 V, thus the unique problem of an increase in the dynamic Rdson is presented. Then the impact of the current operation mode on the on/off transi-tion time is evaluated by a dual-pulse-current-mode test (DPCT) which including a discontinu-ous conduction mode (DCM) and a continuous conduction mode (CCM), thus the transition time is revised for different current mode. Afterward the discrepancy between the drain current and the real channel current is qualitative investigated by an external shunt capacitance (ESC) meth-od, thus the losses due to device parasitic capacitance are also taken into account. After these improvements, the dynamic model will be more compatible for eGaN HEMTs. Finally, the dynamic power losses calculated by this model are verified to be in good agreement with experimental results. Based on this model, we propose a superior solution with qua-si-resonant mode (QRM) to achieve lossless switching and accelerate switching speed.

show abstract

Lossless turn-off switching projection of lateral and vertical GaN power field-effect transistors

Cited by 5 publications

References 12 publications

An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices

An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices

Comparative performance evaluation of lateral and vertical GaN high-voltage power field-effect transistors

An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices

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