Low 1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with electrically abrupt emitter-base junction

Shin, Jin-Hi; Lee, Joonwoo; Chung, Yoonyoung; Ihn, Byoung-Uk; Kim, Bumman

doi:10.1109/55.553044

Cited by 6 publications

(1 citation statement)

References 14 publications

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“…This value of K B exceeds by an order of magnitude the typical values for high-frequency Si-BJTs and is somewhat greater than (but comparable with) the K B magnitudes in unpassivated GaAs/AlGaAs BJTs [10].…”

Section: Resultsmentioning

confidence: 51%

Low frequency noise in 4H-SiC BJTs

Rumyantsev

Levinshteǐn

Agarwal

et al. 2004

Semicond. Sci. Technol.

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Low frequency noise has been investigated in 4H-SiC BJTs for the first time. In BJTs with the current gain β ≈ 10-15 and unity current gain frequency f T of about 1.5 GHz, the corner frequency f c was found to be f c = 2 × 10 4 Hz. The value of the coefficient K B , which is the figure of merit for the noise in the region of noise proportional to squared current, was found to be 6 × 10 −7 µm 2 . This value is only an order of magnitude higher than the typical values for high-frequency Si-BJTs.

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Section: Resultsmentioning

confidence: 51%

Low frequency noise in 4H-SiC BJTs

Rumyantsev

Levinshteǐn

Agarwal

et al. 2004

Semicond. Sci. Technol.

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Analysis of 1/f noise current sources in InP/InGaAs heterojunction bipolar transistors

Jarrix

Pénarier

Pascal

et al. 2003

Journal of Applied Physics

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The 1/f noise of double InP/InGaAs heterojunction bipolar transistors is measured and analyzed. Standard mesa transistors, transistors with an air-bridge-connected base and hexagonal shaped transistors conceived for digital circuits are studied. These differences in the technology will have an influence on the origin of the noise sources. Regarding noise analysis, the base and collector internal current noise sources ib and ic are assumed to be correlated for all devices. This is highlighted by the voltage noise correlation function between the input and the output of the devices presenting an unusual behavior versus bias and geometry. The collector current noise source is divided into a correlated and uncorrelated part with base current. These parts give rise to spectral densities Sc and Snc. They are shown to have distinct origins for the different types of transistor geometry.

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