Low frequency noise in 4H-SiC BJTs

Abstract

Low frequency noise has been investigated in 4H-SiC BJTs for the first time. In BJTs with the current gain β ≈ 10-15 and unity current gain frequency f T of about 1.5 GHz, the corner frequency f c was found to be f c = 2 × 10 4 Hz. The value of the coefficient K B , which is the figure of merit for the noise in the region of noise proportional to squared current, was found to be 6 × 10 −7 µm 2 . This value is only an order of magnitude higher than the typical values for high-frequency Si-BJTs.

Experimental investigation of noise in 4H–SiC p+–n–n+junctions

“…While the electrical characterization of SiC p + -n junctions has been well conducted, the noise properties of these devices are still not well established. Recently, the low-frequency noise properties of 4H-SiC bipolar junction transistors have been reported [11]. In this work, noise measurements in 4H-SiC p + -n-n + junction diodes performed under forward bias and at room temperature are reported.…”