The low frequency noise behaviour of SiC MESFETs

Konczakowska, Alicja; Cichosz, J.; Dokupil, Dariusz; Flisikowski, Paweł; Szewczyk, Arkadiusz; Stawarz-Graczyk, Barbara

doi:10.1109/icnf.2011.5994427

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…Based on primary analysis to see the transistor minimum to maximum operating voltage characteristics and also simulated various models of Silicon Carbide MESFET drain region operating behaviour. Compare to silicon and GaAs materials SiC substrate MESFETS gives large efficiency and bandwidth [2] [3]. The large energy width semiconductor materials are maintains for large carrier density states and large frequency usages [4].…”

Section: Introductionmentioning

confidence: 99%

Noise Power Spectral Density Analysis for Silicon Carbide Substrate MESFET

Reddy*¹

2019

IJITEE

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This paper mainly concentrates on the transistors working functions, electrical characteristics and noise analysis at various operating voltages and temperatures. For this improvement authors are developed simulation methods for better results. The high frequency transistors are exposed with bunch of silicon carbide crystalline substances like 3C, 4H and 6H-SiC MESFETs. Because of the good researchers work, now a day’s all are compared the parameter in between of cubic and hexagonal crystalline structure of silicon carbide MESFETs. Silicon carbide material is having wide band gap because of this reason it’s useful for high energy and high frequency applications. The silicon carbide transistors are having large operating voltage in channel region because of this reason in channel region flows large current and also very less noise is produced. In wide band gap semiconductor transistors are produced very less noise compared to the various categories of substrates.

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Section: Introductionmentioning

confidence: 99%

Noise Power Spectral Density Analysis for Silicon Carbide Substrate MESFET

Reddy*¹

2019

IJITEE

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“…LFN measurements allows for obtaining physical and electrical parameters about oxide traps in MOS devices [1], [2]. Furthermore, it plays an important role in the performance evaluation of linear and nonlinear circuits such as: audio circuits, flash memories, mixers, oscillator, and radio frequency circuits [3]- [5].…”

Section: Introductionmentioning

confidence: 99%

Parametric model calibration and measurement extraction for LFN using virtual instrumentation

Francisco

Jiménèz

2013

2013 14th Latin American Test Workshop - LATW

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This paper presents a replicable and systematic procedure to extract the parameters used in models to estimate low frequency noise (LFN) in metal-oxide-semiconductor (MOS) transistors. This procedure does not neglect the effect of any source of noise manifesting in the device under test (DUT). This procedure includes the design and implementation of an automation process to perform noise measurements using a virtual instrumentation platform. Noise parameters were extracted in different DUT's and validated by comparing simulation data with experimental measurements. All the experimental data was extracted with the automation procedure proposed.

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The low frequency noise behaviour of SiC MESFETs

Cited by 2 publications

References 6 publications

Noise Power Spectral Density Analysis for Silicon Carbide Substrate MESFET

Noise Power Spectral Density Analysis for Silicon Carbide Substrate MESFET

Parametric model calibration and measurement extraction for LFN using virtual instrumentation

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