Low-Absorbing and Thermally Stable Industrial Silicon Nitride Films With Very Low Surface Recombination

Hameiri, Ziv; Borojevic, Nino; Mai, Linh; Nandakumar, Naomi; Kim, Kyung; Winderbaum, Saul

doi:10.1109/jphotov.2017.2706424

Cited by 46 publications

(16 citation statements)

References 37 publications

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“…The deposition conditions and film properties of SiN x III, IV, and V are noted as recipe R2, R6, and R10 respectively, and described in details in Hameiri et al…”

Section: Methodsmentioning

confidence: 99%

Hydrogenation in multicrystalline silicon: The impact of dielectric film properties and firing conditions

Sio

Phang

Nguyen

et al. 2019

Progress in Photovoltaics

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Hydrogenation is a crucial step for improving the efficiency of multicrystalline silicon solar cells. In this work, we investigate the influence of different firing and annealing conditions on the efficacy of bulk hydrogenation in state-of-the-art high-performance multicrystalline silicon, for a range of hydrogen-containing dielectric layers. All of the dielectric films studied, including aluminium oxide, amorphous silicon, and silicon nitride deposited with different tools, yield similar bulk lifetimes when annealed at optimal conditions. However, the optimal conditions vary between films, depending on the film properties. The overall hydrogenation effect does not appear to be affected by the cooling rate used during firing or by the application of illuminated annealing, performed at 250°C under 8 sun illumination.Moreover, we monitor in situ changes in the recombination behaviour of grain boundaries during the hydrogenation process, using a micro-photoluminescence spectroscopy system with a temperature controlled stage. It is found that the hydrogenation reaction occurs at the annealing temperature range between 400°C and 500°C.

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“…The deposition conditions and film properties of SiN x III, IV, and V are noted as recipe R2, R6, and R10 respectively, and described in details in Hameiri et al…”

Section: Methodsmentioning

confidence: 99%

Hydrogenation in multicrystalline silicon: The impact of dielectric film properties and firing conditions

Sio

Phang

Nguyen

et al. 2019

Progress in Photovoltaics

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“…FZ silicon is often assumed to be stable and bulk defect-free, thus it has been used as control materials in many studies of defects or degradation phenomena in silicon grown by other techniques [5]- [7]. FZ silicon wafers are also frequently used for the studies of silicon surface passivation quality [8]- [10], and for the parameterization of This work is funded by Australian Government through Australian Centre for Advanced Photovoltaics (ACAP, project RG200768-G) and the Australian Renewable Energy Agency (ARENA; Project 2017/RND001). The views expressed herein are not necessarily the views of the Australian Government, and the Australian Government does not accept responsibility for any information or advice contained herein.…”

Section: Introductionmentioning

confidence: 99%

Electrical Characterization of Thermally Activated Defects in n-Type Float-Zone Silicon

Zhu

Rougieux

Grant

et al. 2021

IEEE J. Photovoltaics

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“…In order to investigate the effect of hydrogenation of the thermally-activated defects, another wafer from each group went through a silicon nitride (SiN x ) surface repassivation via PECVD. 17 The temperature of the deposition was around 425 °C. No additional firing has been done to the samples after the SiN x deposition.…”

Section: Methodsmentioning

confidence: 99%

New insights into the thermally activated defects in n-type float-zone silicon

Zhu

Rougieux

Grant

et al. 2019

15th International Conference on Concentrator Photovoltaic Systems (CPV-15)

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Float-zone silicon has been long assumed to be bulk defect free and stable. Nevertheless, recently it was found that upon annealing between 450 °C to 700 °C detrimental defects can be activated in this material. Previous studies via deep level transient spectroscopy have identified several defect levels. However, it is still not clear which of these levels have a substantial impact on the minority carrier lifetime. In this study, we determine the recombination parameters of the dominant defect level using a combination of deep level transient spectroscopy and temperature and injection dependent lifetime spectroscopy. Additionally, we investigated the effect of hydrogenation on the thermally activated defects in ntype float-zone silicon.

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Low-Absorbing and Thermally Stable Industrial Silicon Nitride Films With Very Low Surface Recombination

Cited by 46 publications

References 37 publications

Hydrogenation in multicrystalline silicon: The impact of dielectric film properties and firing conditions

Hydrogenation in multicrystalline silicon: The impact of dielectric film properties and firing conditions

Electrical Characterization of Thermally Activated Defects in n-Type Float-Zone Silicon

New insights into the thermally activated defects in n-type float-zone silicon

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