2016
DOI: 10.1364/oe.24.018571
|View full text |Cite
|
Sign up to set email alerts
|

Low-bias current 10 Gbit/s direct modulation of GaInAsP/InP membrane DFB laser on silicon

Abstract: Low-power consumption directly-modulated lasers are a key device for on-chip optical interconnection. We fabricated a GaInAsP/InP membrane DFB laser that exhibited a low-threshold current of 0.21 mA and single-mode operation with a sub-mode suppression ratio of 47 dB at a bias current of 2 mA. A high modulation efficiency of 11 GHz/mA1/2 was obtained. A 10 Gbit/s direct modulation using a non-return-to-zero 231-1 pseudo-random bit sequence signal was performed with a bias current of 1 mA,… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

0
13
2

Year Published

2017
2017
2023
2023

Publication Types

Select...
6
1

Relationship

2
5

Authors

Journals

citations
Cited by 20 publications
(15 citation statements)
references
References 29 publications
0
13
2
Order By: Relevance
“…The MCEF of the 30-μm-long device is higher than that of the 60-μm-long device due to the small active region. However, the value of 7.9 GHz/mA 1/2 for the 30-μm-long device was slightly smaller than the 11 GHz/mA 1/2 of the previously reported membrane DFB laser with the same active region volume of 0.9 μm 3 [43]. The reason for this is low differential gain due to the twice-higher threshold current density of 1.4 kA/cm 2 than that (700 A/cm 2 ) of the membrane DFB laser.…”
Section: Dynamic Characteristicscontrasting
confidence: 62%
See 2 more Smart Citations
“…The MCEF of the 30-μm-long device is higher than that of the 60-μm-long device due to the small active region. However, the value of 7.9 GHz/mA 1/2 for the 30-μm-long device was slightly smaller than the 11 GHz/mA 1/2 of the previously reported membrane DFB laser with the same active region volume of 0.9 μm 3 [43]. The reason for this is low differential gain due to the twice-higher threshold current density of 1.4 kA/cm 2 than that (700 A/cm 2 ) of the membrane DFB laser.…”
Section: Dynamic Characteristicscontrasting
confidence: 62%
“…At this bias condition, the energy cost of the device is estimated to be 980 fJ/bit which is not close to the required 100 fJ/bit. The reason for this is higher bias current compared with previous work [43] due to the noisy signal pattern.…”
Section: Dynamic Characteristicsmentioning
confidence: 68%
See 1 more Smart Citation
“…Because the measurements were performed using on-chip p-i-n PD, f 3dB represents bandwidth of the optical link. Modulation efficiencies of 10.8 GHz/mA 1/2 and 7.6 GHz/mA 1/2 were obtained for f 3dB and f r , respectively; the latter was smaller than that obtained in our previous work (11 GHz/mA 1/2 ) [52]. However, the active volume of the DFB laser in this work was 2.16 μm 3 , which was larger than the previous one (0.9 μm 3 ).…”
Section: Small-signal Modulation Characteristicscontrasting
confidence: 82%
“…Integration with a distributed-Bragg reflector enhanced the output efficiency [50]. Recent works showed the high speed modulation properties of membrane DFB lasers at low-bias currents [51], [52]. Optical transmission has been performed using monolithically integrated membrane DFB lasers and p-i-n PDs [53].…”
Section: Introductionmentioning
confidence: 99%