Low-chirp and external optical feedback resistant characteristics in λ/8 phase-shifted distributed-feedback laser diodes under direct modulation

Huang, Yidong; Satô, Kenji; Okuda, Tomoyuki; Suzuki, N.; Ae, S.; Muroya, Y.; Mori, Koichi; Sasaki, T.; Kobayashi, K.

doi:10.1109/jqe.2002.804292

Cited by 8 publications

(1 citation statement)

References 10 publications

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“…Furthermore, in order to obtain singlelongitudinal-mode (SLM) operation or unique lasing properties, different true phase shifts should be introduced, such as a π [1] or π/2 phase shift. [2] In such DFB lasers, a nm-level precision process, for example, electron-beam (e-beam) lithography, [3] is necessary. Due to the time-consumption and high cost, the e-beam process is still difficult to use commercially.…”

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confidence: 99%

A Special Sampling Structure with an Arbitrary Equivalent-Phase-Shift for Semiconductor Lasers and Multiwavelength Laser Arrays

Zhou

Shi

et al. 2011

Chinese Phys. Lett.

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A method used to introduce an arbitrary equivalent-phase-shift (EPS) into an asymmetric sampled Bragg grating (SBG) is reported. Under the same structural parameters except for the sampling pattern, the asymmetric SBG offers better performance than that of a normal SBG structure for keeping single-longitudinal-mode (SLM) operation. This is because the proposed sampling pattern can suppress the 0 th -order light resonance due to the mismatch between the two different grating sections along the whole SBG. This method can be used to design and fabricate semiconductor lasers and multiwavelength laser arrays (MLAs) with the required EPS at high yield and low cost.

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confidence: 99%

A Special Sampling Structure with an Arbitrary Equivalent-Phase-Shift for Semiconductor Lasers and Multiwavelength Laser Arrays

Zhou

Shi

et al. 2011

Chinese Phys. Lett.

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Experimental demonstration of λ/8 DFB semiconductor laser array for 1.3 μm CWDM system

Huang

Shi

et al. 2014

Sci. China Technol. Sci.

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Photonic integrated technology for multi-wavelength laser emission

Chen

et al. 2011

Chin. Sci. Bull.

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We summarized the design, fabrication challenges and important technologies for multi-wavelength laser transmitting photonic integration. Technologies discussed include multi-wavelength laser arrays, monolithic integration and modularizing coupling and packaging. Fabrication technique requirements have significantly declined with the rise of reconstruction-equivalent-chirp and second nanoimprint mask technologies. The monolithic integration problem between active and passive waveguides can be overcome with Butt-joint and InP array waveguide grating technologies. The dynamic characteristics of multi-factors will be simultaneously measured with multi-port analyzing modules. The performance of photonic integration chips is significantly improved with the autoecious factors compensation packaging technique. photonic integration, laser, multi-wavelength Citation:Chen X F, Liu W, An J M, et al. Photonic integrated technology for multi-wavelength laser emission.

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Low-chirp and external optical feedback resistant characteristics in λ/8 phase-shifted distributed-feedback laser diodes under direct modulation

Cited by 8 publications

References 10 publications

A Special Sampling Structure with an Arbitrary Equivalent-Phase-Shift for Semiconductor Lasers and Multiwavelength Laser Arrays

A Special Sampling Structure with an Arbitrary Equivalent-Phase-Shift for Semiconductor Lasers and Multiwavelength Laser Arrays

Experimental demonstration of λ/8 DFB semiconductor laser array for 1.3 μm CWDM system

Photonic integrated technology for multi-wavelength laser emission

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