In this paper we report, to the best of our knowledge, the first experimental realization of distributed feedback (DFB) semiconductor lasers based on reconstruction-equivalent-chirp (REC) technology. Lasers with different lasing wavelengths are achieved simultaneously on one chip, which shows a potential for the REC technology in combination with the photonic integrated circuits (PIC) technology to be a possible method for monolithic integration, in that its fabrication is as powerful as electron beam technology and the cost and time-consuming are almost the same as standard holographic technology.

Multi-wavelength semiconductor laser arrays (MLAs) have wide applications in wavelength multiplexing division (WDM) networks. In spite of their tremendous potential, adoption of the MLA has been hampered by a number of issues, particularly wavelength precision and fabrication cost. In this paper, we report high channel count MLAs in which the wavelengths of each channel can be determined precisely through low-cost standard μm-level photolithography/holographic lithography and the reconstruction-equivalent-chirp (REC) technique. 60-wavelength MLAs with good wavelength spacing uniformity have been demonstrated experimentally, in which nearly 83% lasers are within a wavelength deviation of ±0.20 nm, corresponding to a tolerance of ±0.032 nm in the period pitch. As a result of employing the equivalent phase shift technique, the single longitudinal mode (SLM) yield is nearly 100%, while the theoretical yield of standard DFB lasers is only around 33.3%.

A single-longitudinal-mode dual-wavelength distributed feedback fiber laser with a wavelength spacing of 0.312 nm is proposed and demonstrated. Based on two spatially separated resonant cavities in a single fiber Bragg grating made by a simple method, stable dual-wavelength lasing is established. Then, a 38.67-GHz microwave signal generated by beating the two lasing wavelengths is obtained with a 3-dB bandwidth of 6 kHz and a frequency drift 5 MHz without any feedback mechanism. As a potential application of this device, a tunable microwave source ranging from 18.67 to 58.67 GHz (with a small discontinuity) is proposed and partially demonstrated.