2007
DOI: 10.1016/j.apsusc.2007.07.063
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Low-cost 3D nanocomposite solar cells obtained by electrodeposition of CuInSe2

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Cited by 23 publications
(24 citation statements)
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“…Fully spray deposited TiO 2 /In 2 S 3 /CIS devices using deposition temperatures up to 300 °C in air and PCEs up to 7% were reported by Goossens and Hofhuis . Using electrodeposition and an annealing step at 350 °C, Valdés et al fabricated CISe BHSCs reaching moderate efficiencies . More recently, Nguyen et al fabricated CIS-based BHSCs using nanocrystalline titania, spray pyrolyzed CIS, and a chemical bath deposited In x (OH) y S z buffer layer, reaching up to 3.2% PCE .…”
Section: Photovoltaic Applicationsmentioning
confidence: 99%
“…Fully spray deposited TiO 2 /In 2 S 3 /CIS devices using deposition temperatures up to 300 °C in air and PCEs up to 7% were reported by Goossens and Hofhuis . Using electrodeposition and an annealing step at 350 °C, Valdés et al fabricated CISe BHSCs reaching moderate efficiencies . More recently, Nguyen et al fabricated CIS-based BHSCs using nanocrystalline titania, spray pyrolyzed CIS, and a chemical bath deposited In x (OH) y S z buffer layer, reaching up to 3.2% PCE .…”
Section: Photovoltaic Applicationsmentioning
confidence: 99%
“…Valdes et al . 128 electrodeposited CuInSe 2 on nanocrystallites of anatase (n‐type TiO 2 ). In these nanostructured materials, the p–n junction is distributed in space, which allows reduction of the minority carrier diffusion length to a few tens of nanometers.…”
Section: Electrochemical Processes For Cigs Depositionmentioning
confidence: 99%
“…In addition, 3-D solar cells are easily fabricated by non-vacuum methods such as spray pyrolysis and chemical bath depositions; consequently, they are well-known as low cost solar cells. The major photoabsorber materials in the 3-D compound solar cells have been CuInS 2 [1-4,9], CuInSe 2 [10], Se [11], Sb 2 S 3 [12-17], CdSe [18,19], and CdTe [20,21]. In the 3-D compound solar cells, the buffer layer between the TiO 2 and absorber layer was commonly utilized to block charge recombination between electrons in TiO 2 and holes in hole-transport materials [1-4,9,10,12-16].…”
Section: Introductionmentioning
confidence: 99%