Low‐Cost, Damage‐Free Patterning of Lead Zirconate Titanate Films

Welsh, Aaron J.; Wilke, Rudeger H. T.; Hickner, Michael A.; Trolier-McKinstry, Susan

doi:10.1111/jace.12505

Cited by 10 publications

(22 citation statements)

References 60 publications

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“…The thickness dependence of room temperature (a) longitudinal piezoelectric coefficient and (b) relative permittivity in polycrystalline morphotropic‐composition PZT , polycrystalline PL a ZT 12/50/50 and PL a ZT 12/30/70, polycrystalline PL a ZT 5/30/70, epitaxial morphotropic phase boundary PZT , and epitaxial PbZr 0.2 Ti 0.8 O 3 , 0.30BiScO 3 –0.70PbTiO 3 , and K 0.5 Na 0.5 NbO 3 thin films extracted from several independent experimental studies. Within each dataset the crystallographic texture and preparation procedures are consistent.…”

Section: Domain Grain Size and Thickness Scaling Effectsmentioning

confidence: 99%

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process‐Structure‐Property Relations

et al. 2016

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Ferroelectric materials are well‐suited for a variety of applications because they can offer a combination of high performance and scaled integration. Examples of note include piezoelectrics to transform between electrical and mechanical energies, capacitors used to store charge, electro‐optic devices, and nonvolatile memory storage. Accordingly, they are widely used as sensors, actuators, energy storage, and memory components, ultrasonic devices, and in consumer electronics products. Because these functional properties arise from a noncentrosymmetric crystal structure with spontaneous strain and a permanent electric dipole, the properties depend upon physical and electrical boundary conditions, and consequently, physical dimension. The change in properties with decreasing physical dimension is commonly referred to as a size effect. In thin films, size effects are widely observed, whereas in bulk ceramics, changes in properties from the values of large‐grained specimens is most notable in samples with grain sizes below several micrometers. It is important to note that ferroelectricity typically persists to length scales of about 10 nm, but below this point is often absent. Despite the stability of ferroelectricity for dimensions greater than ~10 nm, the dielectric and piezoelectric coefficients of scaled ferroelectrics are suppressed relative to their bulk counterparts, in some cases by changes up to 80%. The loss of extrinsic contributions (domain and phase boundary motion) to the electromechanical response accounts for much of this suppression. In this article, the current understanding of the underlying mechanisms for this behavior in perovskite ferroelectrics is reviewed. We focus on the intrinsic limits of ferroelectric response, the roles of electrical and mechanical boundary conditions, grain size and thickness effects, and extraneous effects related to processing. In many cases, multiple mechanisms combine to produce the observed scaling effects.

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Section: Domain Grain Size and Thickness Scaling Effectsmentioning

confidence: 99%

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process‐Structure‐Property Relations

et al. 2016

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“…Bilayer polymer stamps of polyurethane/polydimethylsiloxane (PU/PDMS) were made as described elsewhere . The hydrophilic nature of the polyurethane surface allowed the PZT solution to wet the stamp.…”

Section: Methodsmentioning

confidence: 99%

“…Soft lithography utilizes elastomeric polymer stamps/molds to deposit or confine solutions onto a substrate. Printing of a ceramic solution from stamp surface directly onto a substrate, termed microcontact printing, has been used to deposit patterned lead zirconate titanate (PZT) thin films with comparable electrical properties to continuous PZT thin films …”

Section: Introductionmentioning

confidence: 99%

“…On printing from raised stamp features (protrusions), depicted in Figure A, the wetting angle of the solution on the stamp largely determines the final sidewall angle of the deposited layers . Protrusion‐printing features, ranging in width from 5 to 500 μm, have been used to pattern PZT features with sidewall angles of ~1° . Molding‐based soft lithography can produce larger sidewall angles.…”

Section: Introductionmentioning

confidence: 99%

“…Printing of a ceramic solution from stamp surface directly onto a substrate, termed microcontact printing, has been used to deposit patterned lead zirconate titanate (PZT) thin films with comparable electrical properties to continuous PZT thin films. 13 When printing liquids onto a surface, it is essential that the liquid wet the stamp surface to provide reproducible printed shapes. On printing from raised stamp features (protrusions), depicted in Figure 1A, the wetting angle of the solution on the stamp largely determines the final sidewall angle of the deposited layers.…”

Section: Introductionmentioning

confidence: 99%

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Additively patterned ferroelectric thin films with vertical sidewalls

et al. 2016

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The functional properties of electroceramic thin films can be degraded by subtractive patterning techniques used for microelectromechanical (MEMS) applications. This work explores an alternative deposition technique, where lead zirconate titanate (PZT) liquid precursors are printed onto substrates in a desired geometry from stamp wells (rather than stamp protrusions). Printing from wells significantly increased sidewall angles (from ~1 to >35 degrees) relative to printing solutions from stamp protrusions. Arrays of PZT features were printed, characterized, and compared to continuous PZT thin films of similar thickness. Three‐hundred‐nanometer‐thick printed PZT features exhibit a permittivity of 730 and a loss tangent of 0.022. The features showed remanent polarizations of 26 μC/cm2, and coercive fields of 95 kV/cm. The piezoelectric response of the features produced an e31,f of −5.2 C/m2. This technique was also used to print directly atop prepatterned substrates. Optimization of printing parameters yielded patterned films with 90° sidewalls. Lateral feature sizes ranged from hundreds of micrometers down to one micrometer. In addition, several device designs were prepatterned onto silicon on insulator (SOI) wafers (Si/SiO2/Si with thicknesses of 0.35/1/500 μm). The top patterned silicon was released from the underlying material, and PZT was directly printed and crystallized on the free‐standing structures.

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