Thickness dependent response of domain wall motion in declamped {001} Pb(Zr0·3Ti0.7)O3 thin films

Denis, Lyndsey; Esteves, Giovanni; Walker, Julian; Jones, Jacob L.; Trolier‐McKinstry, Susan

doi:10.1016/j.actamat.2018.03.046

Cited by 26 publications

(8 citation statements)

References 47 publications

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“…The difference in the activation fields between the dense and the porous sample indicates easier polarization reversal in the porous materials, possibly due to different mechanical boundary conditions in the vicinity of the pores compared with the dense counterpart. Enhanced domain switching fraction of ferroelectric/ferroelastic domains in porous films, as compared to their dense counterparts, has been previously observed [70,71] and was related to substrate declamping effects [72,73]. However, more detailed investigations using advanced diffraction techniques are required in bulk porous materials to fully understand, and potentially utilize, this behaviour in the future.…”

Section: Mechanical Boundary Conditionsmentioning

confidence: 88%

Orienting anisometric pores in ferroelectrics: Piezoelectric property engineering through local electric field distributions

Schultheiß

Roscow

Koruza

2019

Phys. Rev. Materials

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Ferroelectrics are a technologically important class of materials, used in actuators, sensors, transducers, and memory devices. Introducing porosity into these materials offers a method of tuning functional properties for certain applications, such as piezoand pyroelectric sensors and energy harvesters. However, the effect of porosity on the polarization switching behaviour of ferroelectrics, which is the fundamental physical process determining their functional properties, remains poorly understood. In part, this is due to the complex effects of porous structure on the local electric field distributions within these materials. To this end, freeze cast porous lead zirconate titanate ceramics were fabricated with highly oriented, anisometric pores and an overall porosity of 34 vol.%. Samples were sectioned at different angles relative to the freezing direction and the effect of pore angle on the switching behaviour was tracked by simultaneously measuring the temporal polarization and strain responses of the materials to high voltage pulses. Finite element modelling was used to assess the effect of the pore structure on the local electric field distributions within the material, providing insight into the experimental observations. It is shown that increasing the pore angle relative to the applied electric field direction decreases the local electric field, resulting in a reduced domain wall dynamic and a broadening of the distribution of switching times. Excellent longitudinal piezoelectric (d33 = 630 pm/V) and strain responses (Sbip = 0.25% and Sneg = 0.13%, respectively), comparable to the dense material (d33 = 648 pm/V, Sbip = 0.31% and Sneg = 0.16%), were found in the PZT with anisometric pores aligned with the poling axis. Orienting the pores perpendicular to the poling axis resulted in the largest reductions in the 2 effective permittivity (𝜀 33 𝜎 = 200 compared to 𝜀 33 𝜎 = 4100 for the dense at 1 kHz), yielding the highest piezoelectric voltage coefficient (g33 = 216 x 10 -3 Vm/N) and energy harvesting figure of merit (d33g33 = 73 x 10 -12 m 2 /N). These results demonstrate that a wide range of application-specific properties can be achieved by careful control of the porous microstructure. This work provides a new understanding of the interplay between the local electric field distribution and polarization reversal in porous ferroelectrics, which is an important step towards further improving the properties of this promising class of materials for sensing, energy harvesting, and low-force actuators.

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Section: Mechanical Boundary Conditionsmentioning

confidence: 88%

Orienting anisometric pores in ferroelectrics: Piezoelectric property engineering through local electric field distributions

Schultheiß

Roscow

Koruza

2019

Phys. Rev. Materials

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“…[41][42][43][44][45][46][47][48] However, extrinsic factors such as interfacial properties, residual stress, chemical defects and structural defects (including grain boundaries) can also have a huge influence on domain switching. 35,[49][50][51][52][53][54][55][56][57] The significant influence of extrinsic factors is perhaps best manifested by the fact that real Ec values determined experimentally from hysteresis measurements are typically much smaller (<10 %) than the intrinsic values predicted by Landau-Ginzburg theory. 45 As a result, the frequency dependence of ferroelectric hysteresis measurements can provide valuable information concerning the domain kinetics and type of extrinsic factors that are dominant in a ferroelectric.…”

Section: Frequency Dependence Of Hysteresismentioning

confidence: 99%

Super-coercive electric field hysteresis in ferroelectric plastic crystal tetramethylammonium bromotrichloroferrate(iii)

et al. 2020

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“…Figure f exhibits the frequency-dependent dielectric constant and dielectric loss. The dielectric constant increases with increasing film thickness from 560 to 702 at 1 kHz, mainly due to the substrate clamping effect. , All of the PNZT thin films have a relatively low dielectric loss below 2%. Figure g shows typical ferroelectric hysteresis loops with increasing applied voltages for 2L samples, with a saturation polarization P s of 37.6 μC/cm 2 and a remnant polarization P r of 19.5 μC/cm 2 .…”

Section: Resultsmentioning

confidence: 99%

Voltage Control of Perpendicular Magnetic Anisotropy in Multiferroic Composite Thin Films under Strong Electric Fields

Peng

Tang

Cheng

et al. 2021

ACS Appl. Mater. Interfaces

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Metrics & MoreArticle Recommendations * sı Supporting Information ABSTRACT: "Ferroelectric/ferromagnetic" multiferroic composites with perpendicular magnetic anisotropy (PMA) are useful for developing power-efficient magnetic memories. Voltage control of PMA has been demonstrated in bulk multiferroic composites based on ferroelectric single crystals, but they are not compatible for integration. Multiferroic composite thin films are useful for developing integrated devices; however, voltage control of PMA in them has not been achieved yet at room temperature due to their low magnetoelectric (ME) coupling coefficient. Here, we demonstrate such functionality and propose to enhance their ME coupling effect under a strong electric field by taking full advantage of the large dielectric strength of ferroelectric thin films. First, the thickness-dependent breakdown of Pb(Zr 0.384 Ti 0.576 Nb 0.04 )O 3 (PNZT) thin films was studied, and the two-layer (∼200 nm) samples exhibited the highest breakdown strength (3.68 MV/cm) and small surface roughness (<1 nm). Second, we fabricated "PNZT/(Co/ Pt) 5 " thin films with strong PMA whose breakdown strength is nearly independent of the top electrode materials. Finally, voltageinduced effective magnetic field (H eff ) in "PNZT/(Co/Pt) 5 " was studied. It is comparable to that achieved in bulk composites and will induce magnetization switching under strong electric fields. Multiferroic composite thin films with large breakdown strength will provide a useful platform for enabling integrated multiferroic devices.

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Thickness dependent response of domain wall motion in declamped {001} Pb(Zr0·3Ti0.7)O3 thin films

Cited by 26 publications

References 47 publications

Orienting anisometric pores in ferroelectrics: Piezoelectric property engineering through local electric field distributions

Orienting anisometric pores in ferroelectrics: Piezoelectric property engineering through local electric field distributions

Super-coercive electric field hysteresis in ferroelectric plastic crystal tetramethylammonium bromotrichloroferrate(iii)

Voltage Control of Perpendicular Magnetic Anisotropy in Multiferroic Composite Thin Films under Strong Electric Fields

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