Uncooled infrared focal plane arrays are being developed for a wide range of thermal imaging applications. Firefighting, predictive maintenance, process control and thermography are a few of the industrial applications which could take benefit from uncooled infrared detector. Therefore, to answer these markets, a 35 µm pixel-pitch uncooled IR detector technology has been developed enabling high performance 160 x 120 and 384 x 288 arrays production. Besides a wide-band version from uncooled 320 x 240 / 45 µm array has been also developed in order to address process control and more precisely industrial furnaces control. The ULIS amorphous silicon technology is well adapted to manufacture low cost detector in mass production. After some brief microbolometer technological background, we present the characterization of 35 µm pixel-pitch detector as well as the wide-band 320 x 240 infrared focal plane arrays with a pixel pitch of 45 µm.
INTRODUCTIONUncooled infrared detectors are now available for various applications. Their simple operating conditions are similar to those of digital CMOS Active Pixel Sensors (APS) used in some digital cameras. They have already shown their potentiality to fulfill many commercial and military applications. One of the key parameters is the low cost achievable with uncooled detectors compared to cooled quantum detectors. Cooled detectors are designed for high performance systems and uncooled detectors are designed for low cost systems and mass production.This paper describes the advantages of the amorphous silicon technology, the characterization of wide-band 320 x 240 uncooled detectors and the characterization of the 35 µm pixel-pitch detectors. This paper will also look at some mass production results of 35 µm pixel-pitch detectors. Finally, a short presentation of the next bolometer generation (wideband and pixel pitch of 25 µm) concludes the discussion.
BACKGROUNDThe bolometer is composed of a thermometer 1 integrated on a micro-bridge. This micro-bridge is supported by two legs anchored over the silicon substrate by metal studs. This micro-bridge is built on a sacrificial layer which is removed in a final step. The micro-bridge is only 0.1µm thick of doped amorphous silicon and the distance between the ROIC and the micro-bridge is 2.5 µm (see figure 1). This vacuum gap works as a quarter wavelength cavity, which sets the detector spectral response maximum at a wavelength close to 10µm. However, the measured response is still substantial in the 3 to 5µm range as shown in the following paragraphs. Figure 1: Bolometer pixel structure Electro-Optical and Infrared Systems: Technology and Applications II, edited