Uncooled microbolometer detector: recent developments at ULIS

Tissot, Jean-Luc; Trouilleau, C.; Fièque, B.; Crastes, A.; Legras, O.

doi:10.2478/s11772-006-0004-2

Cited by 58 publications

(14 citation statements)

References 4 publications

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“…As a consequence, reductions in pixel size increase the cutoff frequency, but they also reduce the sensitivity to IR irradiation. This tradeoff limits the frequency response of traditional microbolometers to about 30-60 Hz [1][2][3] . Umbrella-type microbolometers 4 having a double-layer structure attempt to overcome this limitation by using a space-filling metal/dielectric layer to maximize the absorbed IR energy 5 .…”

Section: We Experimentally Demonstrate Response Times On the Order Ofmentioning

confidence: 99%

Nanoantenna-based ultrafast thermoelectric long-wave infrared detectors

Szakmany

Bernstein

Kinzel

et al. 2020

Sci Rep

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We investigate the generation of electrical signals by suspended thermoelectrically coupled nanoantennas (TECNAs) above a quasi-spherical reflector cavity in response to rapidly changing long-wave infrared radiation. These sensors use a resonant nanoantenna to couple the IR energy to a nanoscale thermocouple. They are positioned over a cavity, etched into the Si substrate, that provides thermal isolation and is designed as an optical element to focus the IR radiation to the antenna. We study the frequency-dependent response of such TECNAs to amplitude-modulated 10.6 μm IR signals. We experimentally demonstrate response times on the order of 3 μs, and a signal bandwidth of about 300 kHz. The observed electrical response is in excellent correlation with finite element method simulations based on the thermal properties of nanostructures. Both experiments and simulations show a key trade-off between sensitivity and response time for such structures and provide solutions for specific target applications.

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Section: We Experimentally Demonstrate Response Times On the Order Ofmentioning

confidence: 99%

Nanoantenna-based ultrafast thermoelectric long-wave infrared detectors

Szakmany

Bernstein

Kinzel

et al. 2020

Sci Rep

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“…The structure of the microbolometer (Fig. 1), for which the thermal parameters were calculated, was determined from analysis of the literature data [1][2][3][4]. The microbolometer consists of a sensitive plate made from polycrystalline SiGe and supports playing the role of heat-removing legs and electrical contacts.…”

Section: General Formulation Of the Problemmentioning

confidence: 99%

Calculation of thermal parameters of SiGe microbolometers

et al. 2007

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The thermal parameters of a SiGe microbolometer were calculated using numerical modeling. The calculated thermal conduction and thermal response time are in good agreement with the values found experimentally and range between 2x10$^-7$ and 7x10$^-8$ W/K and 1.5 and 4.5 ms, respectively. High sensitivity of microbolometer is achieved due to optimization of the thermal response time and thermal conduction by fitting the geometry of supporting heat-removing legs or by selection of a suitable material providing boundary thermal resistance higher than 8x10$^-3$ cm$^2$K/W at the SiGe interface.Comment: 11 pages, 6 figure

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“…In an un-cooled infrared sensor, the detector absorbs infrared radiation, and transfers it into the heat, which changes the specific temperature dependent electrical parameters. With the development of microelectromechanical system (MEMS) technology and innovative CMOS circuit design, microbolometer and diode-based uncooled infrared sensors have emerged as research hotspot [5,6,7,8,9,10].…”

Section: Introductionmentioning

confidence: 99%

An Analog-Front ROIC with On-Chip Non-Uniformity Compensation for Diode-Based Infrared Image Sensors

Zhao

et al. 2019

Sensors

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This paper proposes a CMOS front-end readout-integrated circuit (ROIC) with on-chip non-uniformity compensation technique for a diode-based uncooled infrared image sensor. Two techniques are adopted to achieve on-chip non-uniformity compensation: a reference dummy metal line is introduced to alleviate the dominant non-uniformity with IR-drop presented in large pixel array, and a current splitting architecture-based variable current source for diode bias is proposed to compensate other residual non-uniformity. A differential integrator is chosen as the main amplifier of readout circuit for its superior noise performance. For low power design, a pulse-powered row buffer is designed in this work. The proposed ROIC for 384 × 288 diode-based detector array is fabricated with a 0.35-μm CMOS process. It occupies an area of 4.4 mm × 15 mm, and the power consumption is 180 mW. The measured result shows that with the proposed on-chip non-uniformity compensation, the output voltage variation is greatly reduced from 2.5 V to 60 mV.

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Uncooled microbolometer detector: recent developments at ULIS

Cited by 58 publications

References 4 publications

Nanoantenna-based ultrafast thermoelectric long-wave infrared detectors

Nanoantenna-based ultrafast thermoelectric long-wave infrared detectors

Calculation of thermal parameters of SiGe microbolometers

An Analog-Front ROIC with On-Chip Non-Uniformity Compensation for Diode-Based Infrared Image Sensors

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