Low‐Cost Post‐Growth Treatments of Crystalline Silicon Nanoparticles Improving Surface and Electronic Properties

Niesar, Sabrina; Pereira, Rui N.; Stegner, Andre R.; Erhard, Nadine; Hoeb, Marco; Baumer, Andrea; Wiggers, Hartmut; Brandt, Martin S.; Stutzmann, M.

doi:10.1002/adfm.201101811

Cited by 50 publications

(70 citation statements)

References 46 publications

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“…It is well known that the exponential subbandgap absorption originates from localized band-tail states. [ 46,47 ] For undoped Si NCs the localized band-tail states may be actually surface states given the fact that defects (e.g., dangling bonds) [ 48 ] and impurities (e.g., oxygen) [ 49 ] routinely appear at the NC surface. After B hyperdoping part of B atoms reside at the surface area, [ 30 ] changing the surface state (band-tail states) of Si NCs.…”

Section: Subbandgap Optical Absorptionmentioning

confidence: 99%

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Zhou

et al. 2016

Advanced Optical Materials

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and intermediate-band transition for bulk Si. [ 19,20 ] For Si NCs, hyperdoping is also emerging as an effective means to obtain novel properties. [21][22][23][24][25][26] For instance, localized surface plasmon resonance (LSPR) may occur to hyperdoped Si NCs. [21][22][23] And the energy of the LSPR can be conveniently tuned by the doping level.It is well known that the properties of intrinsic Si NCs are critically dependent on the NC size. [ 27,28 ] However, the size effect for hyperdoped Si NCs has been hardly explored. Previous work simply focused on the effect of the doping level. It has been recently predicted that the LSPR of hyperdoped Si NCs can be controlled by not only the doping level but also the NC size. [ 29 ] This highlights that the critical role played by the size effect may remain for Si NCs after hyperdoping. Therefore, it is of great interest to also investigate the size effect for hyperdoped Si NCs. Knowledge concerning the effect of the NC size on the dependence of the properties of hyperdoped Si NCs on the doping level should be invaluable for the synthesis of hyperdoped Si NCs with desired functionality.In this work, Si NCs hyperdoped with different B-doping levels are considered. The dependence of the physical properties of hyperdoped Si NCs on the NC size is examined. It is shown that the largest Si NCs undergo a stronger reduction of the average lattice spacing upon doping with respect to the smallest ones. While Raman, subbandgap optical absorption and the LSPR spectra are all modifi ed with increasing B concentrations in Si NCs, they also indicate that the largest Si NCs are less affected by disorder and charge carrier surface scattering. As a result, there exists a range of doping concentrations where the LSPR energy can be blueshifted as the NC size decreases. Results and DiscussionBoth B-hyperdoped and undoped Si NCs with different sizes have been synthesized by using SiH 4 -based nonthermal plasma. [ 6,[30][31][32] The atomic concentrations of B in B-hyperdoped Si NCs are ≈17%, 36%, and 60%, which are measured with inductively coupled plasma-atomic emission spectroscopy (ICP-AES). Transmission electron microscopy (TEM) and Raman

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Section: Subbandgap Optical Absorptionmentioning

confidence: 99%

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Zhou

et al. 2016

Advanced Optical Materials

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“…Remarkably, this value is about 30 times lower than that observed for H-terminated Si-NCs grown from microwave plasma assisted decomposition of silane. 24,26 The dangling bonds which are present in the as-produced Si-NCs are in fact most likely located on sites inaccessible to hydrogen, i.e. are not located close to the Si-NCs surface.…”

Section: 29mentioning

confidence: 99%

“…• C. 24,26 Recently, highly efficient photoluminescence was observed after alkene functionalization of Si-NCs grown with injection of additional hydrogen gas into the afterglow region of a nonthermal RF plasma.…”

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confidence: 99%

Freestanding silicon nanocrystals with extremely low defect content

et al. 2012

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The future exploitation of the exceptional properties of freestanding silicon nanocrystals (Si-NCs) in marketable applications relies upon our ability to produce large amounts of defect-free Si-NCs by means of a low-cost method. Here, we demonstrate that Si-NCs fabricated by scalable RF plasmaassisted decomposition of silane with additional hydrogen gas injected into the afterglow region of the plasma exhibit immediately after synthesis the lowest reported defect density, corresponding to a value of only about 0.002-0.005 defects per NC for Si-NCs with 4 nm in size. In addition, the virtually perfect hydrogen termination of these Si-NCs yields an enhanced resistance against natural oxidation in comparison to Si-NCs with nearly one order of magnitude larger initial defect density.

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“…The resistivity of printed patterns from both the suspension and Si-ink was calculated with the increase in temperature ( Figure 6). The resistivity of the both the samples decreased as the temperature was increased to 373 K. It is well-known that the conductivity of free-standing silicon nanoparticles is enhanced with temperature [19]. However, such decrease in resistivity (or increase in conductivity) at relatively smaller temperature (373 K) change could be highly useful for flexible electronic device application where plastic substrates are used.…”

Section: Resultsmentioning

confidence: 90%

Rheology and stability kinetics of bare silicon nanoparticle inks for low-cost direct printing

Jeong

Seo

et al. 2013

AIP Conference Proceedings

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Highly dispersed and stable silicon nanoparticles ink is formulated for its application in direct printing or printable electronics. These dispersions are prepared from free-standing silicon nanoparticles which are not capped with any organic ligand, making it suitable for electronic applications. Silicon nanoparticles dispersions are prepared by suspending the nanoparticles in benzonitrile or ethanol by using polypropylene glycol (PPG) as a binder. All the samples show typical shear thinning behavior while the dispersion samples show low viscosities signifying good quality dispersion. Such thinning behavior favors in fabrication of dense films with spin-coating or patterns with drop casting. The dispersion stability is monitored by turbiscan measurements showing good stability for one week. A low-cost direct printing method for dispersion samples is also demonstrated to obtain micro-sized patterns. Low electrical resistivity of resulting patterns, adjustable viscosity and good stability makes these silicon nanoparticles dispersions highly applicable for direct printing process.

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Low‐Cost Post‐Growth Treatments of Crystalline Silicon Nanoparticles Improving Surface and Electronic Properties

Cited by 50 publications

References 46 publications

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

Freestanding silicon nanocrystals with extremely low defect content

Rheology and stability kinetics of bare silicon nanoparticle inks for low-cost direct printing

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