Low cost sol–gel derived SiC–SiO2 nanocomposite as anti reflection layer for enhanced performance of crystalline silicon solar cells

Synthesis and Characterization of Nanocrystalline Silicon Carbide Thin Films on Multimode Fiber Optic by means 150 MHz VHF-PECVD

“…The peak at 800cm -1 is assigned to SiC bond. [20][21][22] The presence of SiC bond clearly confirms the formation of SiC film on the MMF sensor. Figure 5B illustrates only the SiC spectra, which clearly shows that by increasing of deposition time, the intensity of SiC peak also increased indicating the increasing amount of deposited SiC films.…”

Annealing Temperature Effect on the Physical Properties of Titanium Oxide Thin Films Prepared by the Sol-Gel Method

“…The reduced reflectivity is usually explained by secondary reflections of the incident light at the sidewalls between grains. This reflectivity decrease indicates an efficient control of the antireflecting behavior of TiO 2 thin films [39,40].…”

Effects of Non‐Ionic Surfactants on the Rheological, Electrical and Electrochemical Properties of Highly Loaded Silicon Suspension Electrodes for Semi‐Solid Flow Batteries

“…The FTIR spectra of KB powder with or without TX-100 are same, suggesting that TX-100 also cannot absorb on the surface of KB. For the Si + TX-100 sample, the peaks around 1064 cm À 1 and 1217 cm À 1 can be assigned to the bonds of SiÀ OÀ Si and SiÀ O [37,38] and all these bonds can be observed in pure Si. However, the characteristic peaks of TX-100, such as around 2861 cm À 1 to 2950 cm À 1 , [46] are disappear.…”

“…In order to understand the possible interactions between PVP and the surface of Si or KB nanoparticles, FTIR spectra of Si, KB, PVP, Si + PVP and KB + PVP samples (the last two samples were washed by DEC solvent several times to ensure the removal of non-absorbed PVP) were characterized and the results are shown in Figure 3d. For the Si + PVP sample, the peaks around 462 cm À 1 , 1064 cm À 1 and 1217 cm À 1 can be assigned to the bonds of SiÀ Si, SiÀ OÀ Si and SiÀ O [37,38] and all these bonds can be observed in pure Si. The other peaks around 1284 cm À 1 and 1658 cm À 1 are attributed to N-OH and C=O bond, [39] and the peaks around 1435 cm À 1 and 2939 cm À 1 correspond to CH 2 of PVP.…”