Low-cost uncooled infrared detectors in CMOS process

Eminoglu, Selim; Tezcan, Deniz Sabuncuoglu; Tanrikulu, M. Yusuf; Akın, Tayfun

doi:10.1016/j.sna.2003.08.013

Cited by 63 publications

(27 citation statements)

References 21 publications

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“…The TCR value of VO 2 reaches more than 70%/K near the MIT temperature (T MI ), 9 which is more than ten times that of conventional uncooled bolometer materials such as Si or Ge. [10][11][12] However, VO 2 shows a large thermal hysteresis in the ρ-T curve across the MIT. The hysteretic behavior indicates the coexistence of two phases over a finite temperature range due to superheating and supercooling effects, which is a characteristic of the first-order transition.…”

Section: Introductionmentioning

confidence: 99%

Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition

et al. 2016

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We investigated the effects of chromium (Cr) and niobium (Nb) co-doping on the temperature coefficient of resistance (TCR) and the thermal hysteresis of the metal–insulator transition of vanadium dioxide (VO2) films. We determined the TCR and thermal-hysteresis-width diagram of the V1−x−yCrxNbyO2 films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V0.90Cr0.06Nb0.04O2 film grown on a TiO2-buffered SiO2/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO2-based uncooled bolometers.

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Section: Introductionmentioning

confidence: 99%

Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition

et al. 2016

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“…However, photon detectors require cryogenic temperatures, thus they are not CMOS compatible. Only uncooled infrared detectors can be integrated into CMOS systems [2,3]. Uncooled FPA are composed of thermally isolated thermal sensors, whose physical properties, e.g.…”

Section: Introductionmentioning

confidence: 99%

“…Thermal detectors (e.g. bolometers) are broad band but slow sensors [2,3]. All multi-spectral FPA, even the double-band infrared FPAs, need cryogenic cooling [4].…”

Section: Introductionmentioning

confidence: 99%

Nanoantennas for uncooled, double‐band, CMOS compatible, high‐speed infrared sensors

Matyi

2004

Circuit Theory & Apps

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SUMMARYNanoantennas for double-band uncooled sensors are proposed for infrared focal plane arrays (FPA). Metal-oxide-metal tunnel diodes integrated with the nanoantennas are square-law detectors for currents induced in the antennas by incident infrared radiation. The sensors that operate in the long-wave infrared band are CMOS compatible and facilitate high-speed processing exceeding 1000 frames per second. Double-band sensors are proposed for each pixel of the FPA. The double-band character of the sensor's responsivity is insured by the design of the antenna geometry. The frequency dependence of the insulator material is taken into account. Simulations of the proposed design are promising.

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“…Since the absorption in the atmospheric window between 8 µm and 14 µm is negligible [2], this thermal radiation can be collected by microbolometers for thermal imaging applications without the need for artificial or natural illumination of the scene. In contrast to cryogenic quantum detectors [3], microbolometers operate at room temperature and can be manufactured by using fully CMOS compatible processes [4][5][6][7]. This makes them excellent candidates for lowcost thermal imaging systems which can be used for automotive as well as consumer applications.…”

mentioning

confidence: 99%

“…The great advantage over other concepts (e.g. Si resistors [4], VO x resistors [9] or thermocouples [10]) are the temperature independent temperature sensitivity and the negligible current at reverse bias. As a consequence, no additional switching devices are required for the operation in large arrays for spaceresolved thermal imaging.…”

mentioning

confidence: 99%

Temperature sensitivity modeling of pn-junction diodes for microbolometer-based thermal imaging applications

Utermohlen

Herrmann

Etter

et al. 2013

2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)

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A model for the electrical behavior of pn-junction diodes biased in forward direction and used as a temperature sensitive device (TSD) in microbolometers is presented. It is based on the well-known Shockley equation extended by the ideality factor m. We demonstrate that the largest temperature sensitivity can be reached for diodes at low current density operation featuring a high ideality factor m > 1.Keywords-Microbolometer, thermal imaging, pn-junction diode, temperature sensitivity, compact modeling, ideality factor. I. MOTIVATIONAccording to Planck's law, each object with a temperature above absolute zero emits electromagnetic radiation according to its temperature and surface properties [1]. For objects at room temperature, the spectral peak emittance occurs at a wavelength around 10 µm and, thus, is in the far infrared (FIR) range. Since the absorption in the atmospheric window between 8 µm and 14 µm is negligible [2], this thermal radiation can be collected by microbolometers for thermal imaging applications without the need for artificial or natural illumination of the scene. In contrast to cryogenic quantum detectors [3], microbolometers operate at room temperature and can be manufactured by using fully CMOS compatible processes [4][5][6][7]. This makes them excellent candidates for lowcost thermal imaging systems which can be used for automotive as well as consumer applications. Fig. 1. System model of a microbolometer pixel illustrating the signal path from the IR source to the ASIC. The red frame marks the actual MEMS pixel and the temperature sensitive device where the radiation power is converted to an electrical signal. Fig. 1 indicates that microbolometer operation is a two-step process: At first, the radiation is focused by an optical system on a MEMS pixel which consists of a thermally insulated structure with an absorber. The incident photons lead to a temperature increase which depends on the thermal insulation of the pixel according to(1) A temperature dependent electrothermal model and a corresponding measurement technique for the thermal impedance of microbolometer structures have already been presented by the authors in [8]. Therefore, the focus of this work is on the second step which is a transformation of the temperature increase into an electrical signal. The latter is generated by a temperature sensitive device (TSD) which is directly located on the pixel. It is characterized by a temperature dependent electrical characteristics. In our work, the TSD is represented by a pn-junction diode in forward mode operation. At fixed anode current I A , the anode-to-cathode voltage V AC linearly decreases with increasing temperature. The great advantage over other concepts (e.g. Si resistors [4], VO x resistors [9] or thermocouples [10]) are the temperature independent temperature sensitivity and the negligible current at reverse bias. As a consequence, no additional switching devices are required for the operation in large arrays for spaceresolved thermal imaging. II. ELECTRICAL TSD MODEL A. Fo...

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Low-cost uncooled infrared detectors in CMOS process

Cited by 63 publications

References 21 publications

Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition

Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition

Nanoantennas for uncooled, double‐band, CMOS compatible, high‐speed infrared sensors

Temperature sensitivity modeling of pn-junction diodes for microbolometer-based thermal imaging applications

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