Low cost X-band power amplifier MMIC fabricated on a 0.25μm GaAs phemt process

Bösch, Wolfgang; Mayock, Jim; O'Keefe, M.F.; McMonagle, J.B.

doi:10.1109/radar.2005.1435787

Cited by 13 publications

(12 citation statements)

References 2 publications

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“…The output power, gain, and PAE as a function of input power measured at 9.7 GHz are shown in Fig. 6 6 dBm, and 45.5 dB/40.0 dBm. The signal gain variation as a function temperature, ranging from 50 C to 90 C, is as small as 0.051 dB/ C for four stage PA.…”

Section: Resultsmentioning

confidence: 99%

A 9.1–10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier

Chu

Huang

Liu

et al. 2007

IEEE Microw. Wireless Compon. Lett.

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This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-input and output impedance. Based on 0.35-m gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB smallsignal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7 GHz can be achieved. Index Terms-Monolithic microwave integrated circuit (MMIC), power amplifier (PA), pseudomorphic high electron mobility transistors (PHEMTs), X-band.

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Section: Resultsmentioning

confidence: 99%

A 9.1–10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier

Chu

Huang

Liu

et al. 2007

IEEE Microw. Wireless Compon. Lett.

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“…One of the most important components of the module is a high-power amplifier, which should preferably be developed as a microwave monolithic circuit (MMIC) for the minimization and reproducibility of the module [1][2][3][4]. The conventional amplifiers have their transistors arranged in a row using binary-tree-combining topology.…”

Section: Introductionmentioning

confidence: 99%

“…The offset reflector configuration overcomes these limitations of a prime-focal reflector, as the fields radiated by the reflector are not blocked by the primary feed. Also, the offset reflector possesses several additional advantages, such as isolation between the reflector and the feed, lesser spurious radiation and suppressed side-lobes as compared to a symmetrical parabolic reflector antenna [2]. However, the performance of an offset reflector is satisfactory only when the larger F/D (F/D > 1) configuration is selected.…”

Section: Introductionmentioning

confidence: 99%

“…However, the performance of an offset reflector is satisfactory only when the larger F/D (F/D > 1) configuration is selected. Alternatively, the use of an offset reflector antenna with a smaller F/D ratio results into high cross-polarization when illuminated by a linearly polarized feed and beam-squinting in case of a circularly polarized feed [2]. The high cross-polarization and beam-squinting restricts the use of offset reflectors where the frequency reuse is necessary for the effective utilization of the available bandwidth.…”

Section: Introductionmentioning

confidence: 99%

“…As suggested by Rudge and Adatia [2,[9][10][11], by adding a suitable proportion of higher order HE 21 mode to the fundamental HE 11 mode, a dual-mode corrugated matched feed can be designed. This type of feed when illuminates an offset reflector antenna, the undesirable cross-polarization will be cancelled-out.…”

Section: Introductionmentioning

confidence: 99%

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X‐band high‐power amplifier with a magnetically coupled power‐combiner

Lee

Park

Chun

et al. 2009

Micro & Optical Tech Letters

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In this article, a high-power amplifier for X-band application is studied, which consists of a two-stage amplifier with magnetically coupled power-combiners and dividers. These are based on transmission line transformers, which has lower loss characteristics than spiral-type transformers at the frequencies. The proposed amplifier utilizes the voltage-combining concept with the transformers and differential amplifiers. The size of the amplifier is also minimized by using the virtual grounds of the differential structure. The saturated output power of the power amplifier is 38.1 dBm (6.45 W), and the gain is 17 dB at 10 GHz. The area of the chip is 2.56 mm Â 3.13 mm and the power density of the amplifier is 806 mW/mm 2 .ABSTRACT: This article presents the design and radiation characteristics of a dual-mode corrugated matched feed horn. This type of feed eliminates the unwanted high cross-polarization of an offset parabolic reflector antenna and improves the overall performance of the antenna sub-system. In a cylindrical corrugated structure, higher order HE 21 mode is added with the fundamental HE 11 mode to configure a dual-mode corrugated horn. For the proposed horn, the return-loss characteristics and the far-field radiation patterns were measured and the results are compared with the simulated results. The horn has been used as a primary feed device to illuminate a linearly polarized offset parabolic reflector antenna and the improvement in the crosspolarization has been estimated. Figure 1 Simulated secondary radiation pattern of an offset reflector illuminated by a conventional (HE 11 mode guided) corrugated horn. (For F/D ¼ 0.82, h 0 ¼ 34.8 )

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A fully matched 9 W compact PHEMT MMIC high power amplifier for X‐band phase array radar applications

Chu

Huang

Liu

et al. 2006

Micro & Optical Tech Letters

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This paper presents a compact X‐band, 9 W AlGaAs/InGaAs/GaAs PHEMT MMIC high power amplifier. This amplifier is designed to fully match a 50 Ω input and output impedance. Based on 0.35 μm gate‐length power PHEMT technology, a two‐stage power amplifier is fabricated on a 3‐mil thick wafer. While operating under 9 V DC bias condition, the characteristics of 17 dB small‐signal gain, an average of 9 W continuous‐wave output power, and 34% power added efficiency from 9.0 to 10.5 GHz can be achieved. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 257–261, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22102

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Low cost X-band power amplifier MMIC fabricated on a 0.25μm GaAs phemt process

Cited by 13 publications

References 2 publications

A 9.1–10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier

A 9.1–10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier

X‐band high‐power amplifier with a magnetically coupled power‐combiner

A fully matched 9 W compact PHEMT MMIC high power amplifier for X‐band phase array radar applications

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