Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions

Sato, Taketomo; Toguchi, Masachika; Komatsu, Y.; Uemura, Kunihiko

doi:10.1109/tsm.2019.2934727

Cited by 8 publications

(2 citation statements)

References 20 publications

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“…Photoelectrochemical (PEC) etching through photo-assisted anodic oxidation is interesting for nitride semiconductors since the high thermal and chemical stability hinders the use of typical wet chemical etching. The necessary amount of photo-induced holes is regulated by choosing the relevant wavelength λ and anodic bias [40]. The holes are generated at the anode present at the GaN/electrolyte interface, specifically where electrons are given off to the outside circuit.…”

Section: Plasma Induced Damagementioning

confidence: 99%

Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

et al. 2023

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For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two dimensional electron gas (2-DEG) and achieve a normally-OFF behavior. But fully recessed MIS gate GaN power transistors or MOSc-HEMTs have gained interest as normally-OFF HEMTs thanks to the wider voltage swing and reduced gate leakage current when compared to p-GaN gate HEMTs. However the mandatory AlGaN barrier etching to deplete the 2-DEG combined with the nature of the dielectric/GaN interface generates etching-related defects, traps, and roughness. As a consequence, the threshold voltage (VTH) can be unstable, and the electron mobility is reduced, which presents a challenge for the integration of a fully recessed MIS gate. Recent developments have been studied to solve this challenge. In this paper, we discuss developments in gate recess with low impact etching and atomic layer etching (ALE) alongside surface treatments such as wet cleaning, thermal or plasma treatment, all in the scope of having a surface close to pristine. Finally, different interfacial layers, such as AlN, and alternative dielectrics investigated to optimize the dielectric/GaN interface are presented.

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Section: Plasma Induced Damagementioning

confidence: 99%

Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

et al. 2023

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“…To meet this demand, photoelectrochemical etching, a type of wet etching, has been actively studied in recent years. [15][16][17][18][19][20][21][22][23][24][25][26][27] In these photoelectrochemical etching, GaN is electrochemically oxidized in an electrolyte solution with being irradiated with UV light so that the oxide generated is dissolved and removed. This method thus enables wet etching of chemically stable GaN.…”

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confidence: 99%

Evaluation of electrical properties in anodized n-GaN grown on sapphire substrates at different anodization voltages

Kamio,

Fujioka,

Maeda

2023

Jpn. J. Appl. Phys.

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n-GaN grown on sapphire substrates was anodized in an electrolyte solution at different voltages (2 and 4 V) for 3600 s, and the electrical properties of the anodized n-GaN were evaluated. The resistivity of the sample anodized at 2 V increased by a factor of 2.4 at RT, and that of the sample anodized at 4 V increased by a factor of 76 at RT The analysis of temperature dependent Hall effect measurements revealed that anodization changes original donor levels and/or generates energy levels depending on anodization voltages. Anodization has a possibility to transform GaN into GaON-like materials.

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Energization‐Time Dependence of Electrical Properties of Anodized n‐GaN Grown on Si Substrates

Kamio,

Fujioka,

Maeda

2024

Physica Status Solidi (b)

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With a view to device applications as a new material, n‐GaN grown on Si substrates is anodized at 4 V in an electrolyte solution for different energization times (15–240 min), and the dependence of the changes in electrical properties on the anodization time is evaluated. Anodization at 4 V increases the resistivity of n‐GaN with increasing energization time. To investigate the origin of the increase in resistivity by anodization, the results of the temperature dependence of the Hall mobility and electron density are discussed. The Hall mobility decreases with increasing energization time. The decrease in Hall mobility is because anodization forms neutral defects and increases neutral‐impurity scattering. The electron density decreases with increasing energization time. The decrease in electron density occurs because anodization deepens the original donor level and generates a deeper level that captures electrons. Thus, anodization changes the electrical properties of n‐GaN grown on Si substrate, and their dependence on energization time is discussed in detail.

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Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions

Cited by 8 publications

References 20 publications

Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

Evaluation of electrical properties in anodized n-GaN grown on sapphire substrates at different anodization voltages

Energization‐Time Dependence of Electrical Properties of Anodized n‐GaN Grown on Si Substrates

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