2009
DOI: 10.1063/1.3067607
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Low damping constant for Co2FeAl Heusler alloy films and its correlation with density of states

Abstract: Gilbert damping for the epitaxial Co2FeAl Heusler alloy films was investigated. Gilbert damping constant for the films was evaluated by analyzing the data of ferromagnetic resonance measured at the frequency of 2–20 GHz. Gilbert damping constant for the film without annealing was rather large, while it decreased remarkably with postannealing. Gilbert damping constant for the film annealed at 600 °C was ≃0.001. These behavior of Gilbert damping constant can be well explained by the fact that the density of stat… Show more

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Cited by 252 publications
(173 citation statements)
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“…39 The inhomogeneous line broadening is found to be small for our LSMO films ∆H inh = 1.3 Oe, with a negligible mosaicity contribution ≤ 0.7 Oe. Next, we study the effect of adding a Pt capping layer to LSMO films.…”
Section: -5mentioning
confidence: 99%
“…39 The inhomogeneous line broadening is found to be small for our LSMO films ∆H inh = 1.3 Oe, with a negligible mosaicity contribution ≤ 0.7 Oe. Next, we study the effect of adding a Pt capping layer to LSMO films.…”
Section: -5mentioning
confidence: 99%
“…The magnetic and half-metallic properties of Heusler alloys depend crucially on the atomic order [27][28][29][30][31][32], as mentioned above: true half-metallicity with a spin polarization of 100% is theoretically predicted only for perfect longrange L2 1 crystal structure. Therefore, the preparation of Heusler alloy thin films with L2 1 crystal structure is of utmost importance for optimizing the performance of Heusler alloys in spintronic devices.…”
Section: Introductionmentioning
confidence: 99%
“…The damping parameter determines the length scales over which spin waves can propagate, the critical current density for STT excitation [91][92][93] and the fidelity of communication and data processing devices that exploit the resonant mode spectrum. Reduced damping parameters of a = 0.001 have been realized in half-metallic materials [94,95], where spin-flip scattering is thought to be suppressed, while V doping has been observed to reduce the damping parameter of the highest quality Fe films [96]. Therefore, future spintronic devices may be constructed from epitaxial thin-film materials, as in the semiconductor industry today, which also provide opportunities to more fully control and exploit magnetic anisotropy.…”
Section: Further Investigation and Exploitation Of Magnetization Dynamentioning
confidence: 99%