Low Dark Current 1.55 Micrometer InAs Quantum Dash Waveguide Photodiodes

Wan, Yating; Shang, Chen; Huang, Jian; Xie, Zhiyang; Jain, Aditya; Norman, Justin; Chen, Baile; Gossard, A. C.; Bowers, John E.

doi:10.1021/acsnano.9b09715

Cited by 18 publications

(6 citation statements)

References 52 publications

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“…The average of this dark current is 11.48 pA or 1.84 µA• cm −2 , with a standard deviation of 4.49 pA or 0.72 µA• cm −2 . The dark current is very low for an integrated III-V photodiode [27,28], due to the larger bandgap of GaAs. Nevertheless, the dark current of the devices are on par or lower than that of commercial solutions [29].…”

Section: Resultsmentioning

confidence: 99%

Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications

Goyvaerts¹,

Kumari²,

Uvin³

et al. 2020

Opt. Express

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We demonstrate waveguide-detector coupling through the integration of GaAs p-in photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer-printing. Both single device and arrayed printing is demonstrated. The photodiodes exhibit dark currents below 20 pA and waveguide-referred responsivities of up to 0.30 A/W at 2V reverse bias, corresponding to an external quantum efficiency of 47% at 860 nm. We have integrated the detectors on top of a 10-channel on-chip arrayed waveguide grating (AWG) spectrometer, made in the commercially available imec BioPIX-300 nm platform.

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Section: Resultsmentioning

confidence: 99%

Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications

Goyvaerts¹,

Kumari²,

Uvin³

et al. 2020

Opt. Express

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“…Neither the asymmetric graded filter nor the trapping layers are unique to the GaAs-based material system. The analogies of such structures could be extended to other material systems, for example, the InAs/InP quantum dash system, where high performance broadband optical amplifiers, mode-locked lasers, superluminescent diodes, and photodetectors have been realized on a native InP substrate. Yet, the performance of the on-Si devices is less than ideal, possibly due to the insufficient reduction of the above-mentioned defects.…”

Section: Reliability Of Qd Lasers Epitaxially Grown On (001) Simentioning

confidence: 99%

Perspectives on Advances in Quantum Dot Lasers and Integration with Si Photonic Integrated Circuits

et al. 2021

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Epitaxially grown quantum dot (QD) lasers are emerging as an economical approach to obtain on-chip light sources. Thanks to the three-dimensional confinement of carriers, QDs show greatly improved tolerance to defects and promise other advantages such as low transparency current density, high temperature operation, isolator-free operation, and enhanced four-wave-mixing. These material properties distinguish them from traditional III–V/Si quantum wells (QWs) and have spawned intense interest to explore a full set of photonic integration using epitaxial growth technology. We present here a summary of the most recent developments of QD lasers grown on a CMOS-compatible (001) Si substrate, with a focus on breakthroughs in long lifetime at elevated temperatures. Threading dislocations are significantly reduced to the level of 1 × 106 cm–2 via a novel asymmetric step-graded filter. Misfit dislocations are efficiently blocked from the QD region through well-engineered trapping layers. A record-breaking extrapolated lifetime of more than 200000 hours has been achieved at 80 °C, forecasting that device reliability is now entering the realm of commercial relevance and a monolithically integrated light source is finally on the horizon.

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“…Due to the lower lattice mismatch and bandgap difference compared to the InAs QD/GaAs system, InAs Qdashes can be grown larger with longer emission wavelengths. Thus, the InAs Qdash/InP system has been heavily studied for the technologically important C-band (1.55 μm) [ 13 – 15 ]. Placing the InAs Qdashes between InGaAs QWs (QDaWell) further weakens the quantum confinement effect, which finally enables 2-μm emission [ 16 ].…”

Section: Introductionmentioning

confidence: 99%

Punctuated growth of InAs quantum dashes-in-a-well for enhanced 2-μm emission

et al. 2023

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InAs quantum dashes (Qdash) engineered to emit near 2 μm are envisioned to be promising quantum emitters for next-generation technologies in sensing and communications. In this study, we explore the effect of punctuated growth (PG) on the structure and optical properties of InP-based InAs Qdashes emitting near the 2-μm wavelength. Morphological analysis revealed that PG led to an improvement in in-plane size uniformity and increases in average height and height distribution. A 2 × boost in photoluminescence intensity was observed, which we attribute to improved lateral dimensions and structural stabilization. PG encouraged formation of taller Qdashes while photoluminescence measurements revealed a blue-shift in the peak wavelength. We proposed that the blue-shift originates from the thinner quantum well cap and decreased distance between the Qdash and InAlGaAs barrier. This study on the punctuated growth of large InAs Qdashes is a step toward realizing bright, tunable, and broadband sources for 2-μm communications, spectroscopy, and sensing.

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Low Dark Current 1.55 Micrometer InAs Quantum Dash Waveguide Photodiodes

Cited by 18 publications

References 52 publications

Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications

Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications

Perspectives on Advances in Quantum Dot Lasers and Integration with Si Photonic Integrated Circuits

Punctuated growth of InAs quantum dashes-in-a-well for enhanced 2-μm emission

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