Low dark current SWIR photodiode with InGaAs/GaAsSb Type II quantum wells grown on InP substrate

Ishiguro, Hiroshi; Miura, K.; Nagai, Y.; Tsubokura, M.; Moto, Akihiro; Iguchi, Yasuhiro; Kawamura, Y.

doi:10.1109/iciprm.2009.5012464

Cited by 9 publications

(4 citation statements)

References 3 publications

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“…The results are shown in Figure 5-8. As expected, the device has an optical response out to a longer wavelength than the device with lattice matched 5nm InGaAs/ 5nm GaAsSb quantum wells absorption [34,[79][80][81] and the response increases with temperature because the photo generated carriers have more thermal energy to transport over the hetero-barriers and transit to the electrodes. One unanswered questions is the mechanism by which these carriers get out of quantum wells, since both thermionic emission and phonon assisted tunneling can be the dominant carrier transport mechanism.…”

Section: Optical Characteristicssupporting

confidence: 52%

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InP Based Type-II Quantum Wells PIN Photodiodes

Chen

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Short wavelength infrared (SWIR) and mid wavelength infrared (MWIR) photodetectors have applications in areas such as chemical sensing, gas monitoring, medical diagnostics, infrared imaging and free-space communications. Mercury Cadmium Telluride (HgCdTe) is the predominant material system used in SWIR, MWIR and long wavelength infrared (LWIR) applications. However, HgCdTe often suffers from poor material uniformity and low yield. Comparable performance can be achieved on GaSb substrates with high quality InAs/GaSb strained-layer superlattices, but significant cooling is required to achieve high detectivity performance. Indium Phosphide (InP) based InGaAs/GaAsSb type-II quantum wells photodiodes are the promising candidates for the detection in SWIR and MWIR region, especially at room temperature. These photodiodes can take advantage of mature material and device technology of InP material system. In this dissertation, I study these InP based type-II quantum wells photodiodes theoretically and experimentally. Six-band k• p modeling was used to design these type-II quantum well structures. It is found that in order to maximize the transition wavelength and wave function overlap under strain compensated condition, the thickness of the InGaAs layer should be larger than that of the GaAsSb layer, and the GaAsSb layer should be compressively strained, while InGaAs layer should be tensile strained. Both lattice matched and conventional strain compensated type-II quantum wells photodiodes are designed and studied experimentally in this dissertation. How the performance of these type-II photodiodes changes as the detection wavelength increases is studied by comparing the performance of both photodiodes. The research has shown that the device with 100 pairs of 7nm In 0.34 Ga 0.66 As/5nm GaAs 0.25 Sb 0.75 strain compensated type-II quantum wells absorption region has an optical response out to 3.2µm, while the device with 100 pairs of 7nm In 0.53 Ga 0.47 As/5nm GaAs 0.5 Sb 0.5 lattice matched type-II QWs absorption region has an optical response out to 2.7µm. The strain compensated devices show detectivities of 1.4×10 9 cm• Hz 1/2 •W-1 at λ=2.7m at 290K and 1.5×10 10 cm• Hz 1/2 •W-1 at 200K. For λ=3.0m, the detectivity D* is 2.0×10 8 cm• Hz 1/2 •W-1 at 290K and increases to 1.0×10 9 cm• Hz 1/2 •W-1 at 200K. They are the first 3µm results demonstrated on InP substrate, using interband transition without lattice mismatch layers. Moreover, in order to further extend the detection wavelength, the new strain compensated InGaAs/GaAsSb QWs PIN photodiode is studied, which can lead to much longer detection wavelengths for similar GaAsSb compositions based on the modeling. This new strain compensation concept is demonstrated experimentally to have a cutoff wavelength similar to that of conventional strain compensated sample but with lower Sb composition in the GaAsSb layer. In addition, the carrier transport mechanism in the type-II quantum wells is studied in order to improve the carrier collection efficiency, and it is found th...

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Section: Optical Characteristicssupporting

confidence: 52%

“…Inada et. al [79]. used 250 pairs of the aforementioned quantum wells as the absorption region to achieve the responsivity 0.6A/W at 2.2 µm with dark current density of 0.92mA/cm 2 .…”

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confidence: 99%

InP Based Type-II Quantum Wells PIN Photodiodes

Chen

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“…Much has been discussed in the literature about the nBn and related devices, including XBn barrier photodetector [2,5,[6][7][8], and unipolar barrier photodiode [9], since the publication of the influential paper entitled "nBn detector, an infrared detector with reduced dark current and higher operating temperature" by Maimon and Wicks in 2006 [1]. Common to this family of devices is the unipolar barrier.…”

Section: Barrier Infrared Detectorsmentioning

confidence: 99%

Antimonides Type-II superlattice digital focal plane arrays for Space remote sensing instruments

Gunapala

Ting

Soibel

et al. 2019

International Conference on Space Optics — ICSO 2018

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“…For the applications in areas such as chemical sensing, gas monitoring and infrared imaging, it would be more desirable to extend the detection wavelength beyond 1.7 μm. Longer detection wavelength can be achieved by using Indium-rich InGaAs materials [4][5][6][7] or InGaAs/ GaAsSb type-II multiple quantum wells (MQW) structures [8][9][10][11][12][13][14][15][16][17]. For example, Hamamatsu [18] sells an uncooled Inrich InGaAs PD with cutoff wavelength of 2.6 μm, peak responsivity of 1.3 A W −1 .…”

Section: Introductionmentioning

confidence: 99%

Deep levels analysis in wavelength extended InGaAsBi photodetector

Huang

Chen

Yuan

et al. 2019

Semicond. Sci. Technol.

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InP based dilute Bismide InGaAsBi material is emerging as a promising candidate for extending short wavelength infrared detection. One critical factor to limit the performance of these InGaAsBi photodiodes is dark current caused by defects within the material. In this work, low frequency noise spectroscopy (LFNS) and temperature varied photoluminescence was used to characterize the defect levels in the devices. Three deep levels located at E c -0.33 eV, E v +0.14 eV, and E c -0.51 eV were identified from the LFNS spectra, which are consistent with emission peak energy found by photoluminescence spectra of InGaAsBi.

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Low dark current SWIR photodiode with InGaAs/GaAsSb Type II quantum wells grown on InP substrate

Cited by 9 publications

References 3 publications

InP Based Type-II Quantum Wells PIN Photodiodes

InP Based Type-II Quantum Wells PIN Photodiodes

Antimonides Type-II superlattice digital focal plane arrays for Space remote sensing instruments

Deep levels analysis in wavelength extended InGaAsBi photodetector

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