2019
DOI: 10.1088/1361-6641/ab3539
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Deep levels analysis in wavelength extended InGaAsBi photodetector

Abstract: InP based dilute Bismide InGaAsBi material is emerging as a promising candidate for extending short wavelength infrared detection. One critical factor to limit the performance of these InGaAsBi photodiodes is dark current caused by defects within the material. In this work, low frequency noise spectroscopy (LFNS) and temperature varied photoluminescence was used to characterize the defect levels in the devices. Three deep levels located at E c -0.33 eV, E v +0.14 eV, and E c -0.51 eV were identified from the L… Show more

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Cited by 6 publications
(2 citation statements)
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“…The noise, EQE, and responsivity ( R ) of Si/PbS PD were measured under 200 Hz frequency illumination without reverse bias. The noise power density (Figure c) in the range of 80–3000 Hz is dominated by generation-recombination (g-r) noise, which is independent of frequency in the low-frequency range . Due to the enhanced coupling between CQDs in solid, the exciton peak of the PbS-EDT layer is shifted to 1540 nm.…”
Section: Results and Discussionmentioning
confidence: 99%
“…The noise, EQE, and responsivity ( R ) of Si/PbS PD were measured under 200 Hz frequency illumination without reverse bias. The noise power density (Figure c) in the range of 80–3000 Hz is dominated by generation-recombination (g-r) noise, which is independent of frequency in the low-frequency range . Due to the enhanced coupling between CQDs in solid, the exciton peak of the PbS-EDT layer is shifted to 1540 nm.…”
Section: Results and Discussionmentioning
confidence: 99%
“…InGaAs photodiodes, on the other hand, exhibit excellent responsivity in the NIR range, typically from 0.9 up to 2.6 micrometers. In addition of the unrivaled extended detection range, InGaAs offers low noise, and high-speed performance [21][22][23] .…”
Section: Introductionmentioning
confidence: 99%