Low dielectric constant multilayer glass-ceramic substrate with Ag-Pd wiring for VLSI package

Shimada, Yuzo; Yamashita, Y; Takamizawa, H.

doi:10.1109/33.2981

Cited by 36 publications

(9 citation statements)

References 6 publications

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“…Besides appropriate dielectric constant, low dielectric loss is also an important property of the substrate material for microelectronic packaging with high propagation speed [57][58].…”

Section: Lowering the Dielectric Constantmentioning

confidence: 99%

Structural and Dielectric Properties of Glass – Ceramic Substrate with Varied Sintering Temperatures

Alias¹

2013

Sintering Applications

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“…Besides appropriate dielectric constant, low dielectric loss is also an important property of the substrate material for microelectronic packaging with high propagation speed [57][58].…”

Section: Lowering the Dielectric Constantmentioning

confidence: 99%

Structural and Dielectric Properties of Glass – Ceramic Substrate with Varied Sintering Temperatures

Alias¹

2013

Sintering Applications

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“…As for Al 2 O 3 , the ambipolar hydroxyl groups have dissociation constants of p K 1 = 10 for the negative ionization reaction and p K 2 = 6 for the positive ionization reaction . The dielectric constant of Al 2 O 3 is 9 . The density of ionizable sites on crystalline Al 2 O 3 ranges from 6 to 16.5 nm −2 depending on the crystal structure .…”

Section: Practical Limits Of Electrofluidic Gatingmentioning

confidence: 99%

“…28 The dielectric constant of Al 2 O 3 is 9. 67 The density of ionizable sites on crystalline Al 2 O 3 ranges from 6 to 16.5 nm -2 depending on the crystal structure. 68 Here, we set the density of ionizable sites to be Γ = 8 Â 10 18 m -2 , equal to the density of sites on SiO 2 , in order to approximate an amorphous structure of Al 2 O 3 .…”

Section: Practical Limits Of Electrofluidic Gatingmentioning

confidence: 99%

Electrofluidic Gating of a Chemically Reactive Surface

Jiang

Stein

2010

Langmuir

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We consider the influence of an electric field applied normal to the electric double layer at a chemically reactive surface. Our goal is to elucidate how surface chemistry affects the potential for field-effect control over micro- and nanofluidic systems, which we call electrofluidic gating. The charging of a metal-oxide-electrolyte (MOE) capacitor is first modeled analytically. We apply the Poisson-Boltzmann description of the double layer and impose chemical equilibrium between the ionizable surface groups and the solution at the solid-liquid interface. The chemically reactive surface is predicted to behave as a buffer, regulating the charge in the double layer by either protonating or deprotonating in response to the applied field. We present the dependence of the charge density and the electrochemical potential of the double layer on the applied field, the density, and the dissociation constants of ionizable surface groups and the ionic strength and the pH of the electrolyte. We simulate the responses of SiO(2) and Al(2)O(3), two widely used oxide insulators with different surface chemistries. We also consider the limits to electrofluidic gating imposed by the nonlinear behavior of the double layer and the dielectric strength of oxide materials, which were measured for SiO(2) and Al(2)O(3) films in MOE configurations. Our results clarify the response of chemically reactive surfaces to applied fields, which is crucial to understanding electrofluidic effects in real devices.

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“…T he demand to achieve high speed, high frequency and high circuit density in microelectronic systems has led to recent interest in low‐temperature‐cofired ceramics (LTCC). LTCC technology offers potential multifunctionality to the microelectronic packaging with integrated electrical, magnetic, mechanical, thermal, chemical, biological, and sensor functions which is predicted to lead to completely new systems in the near future 1–18 . LTCC compared with the high temperature cofired ceramics offer potential advantages in terms of choice of cheaper and excellent conductors such as silver, gold, and copper for the circuit lines along with low dielectric constant ( k <8) and temperature coefficient of expansion (TCE)<7 × 10 −6 .…”

Section: Introductionmentioning

confidence: 99%

Influence of Nature of Filler on Densification of Anorthite‐Based Crystallizable Glass+Ceramic System for Low Temperature Cofired Ceramics Application

Kumar

Sowmya

Sunny

et al. 2009

Journal of the American Ceramic Society

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This paper deals with the critical aspects of sintering of crystallizable glass+ceramic system, which is a critical part of low‐temperature‐cofired ceramics (LTCC) process. Densification studies clearly revealed the influence of filler's nature especially at lower glass contents (≤70 vol%) and lower sintering temperatures. In this temperature range, marked improvement in density was observed in the order cordierite>fused silica>mullite>alumina. The decisive role played by wetting of glass on filler has been demonstrated using heating microscopy and wetting studies. However, densification was not influenced by the nature of filler at higher glass contents (>70 vol%) and at higher sintering temperatures. This is because in this range of glass content viscous flow of glass dominates the wetting behavior. This paper brings out the salient features responsible for the sintering behavior of anorthite glass+ceramic LTCC composition.

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Low dielectric constant multilayer glass-ceramic substrate with Ag-Pd wiring for VLSI package

Cited by 36 publications

References 6 publications

Structural and Dielectric Properties of Glass – Ceramic Substrate with Varied Sintering Temperatures

Structural and Dielectric Properties of Glass – Ceramic Substrate with Varied Sintering Temperatures

Electrofluidic Gating of a Chemically Reactive Surface

Influence of Nature of Filler on Densification of Anorthite‐Based Crystallizable Glass+Ceramic System for Low Temperature Cofired Ceramics Application

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