Low-Dielectric-Constant Nonporous Fluorocarbon Films for Interlayer Dielectric

Itoh, Azumi; Inokuchi, Atsutoshi; Yasuda, Seiji; Teramoto, Akinobu; Goto, Tetsuya; Hirayama, Masaki; Ohmi, Tadahiro

doi:10.1143/jjap.47.2515

Cited by 22 publications

(28 citation statements)

References 12 publications

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“…61 This technique has also been used to generate a nonporous fluorocarbon film using a C 5 F 8 precursor. 62 The dielectric constant of the films was reported as less than 2.0 and also exhibited low leakage current with good mechanical and thermal robustness. The other competitive technology is the so-called air gap methodology where the dielectric constant is reduced by the introduction of free-space between copper wires.…”

Section: Closing Remarks and Outlookmentioning

confidence: 97%

Advances in Ultra Low Dielectric Constant Ordered Porous Materials

et al. 2011

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The development of ultra-low dielectric constant silicon-based materials was reviewed in this article. The dielectric constants of these kinds of mesoporous and microporous materials can be kept at less than 2 by controlling their pore size and pore density. Even though these materials show remarkable electrical breakdown characteristics and leakage currents, they have to surmount mechanistic issues, low resistance to electrical migration, and hydrophilicity. To further enhance material properties and make them compatible with current demands, research into other new synthesis methods is still required.

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Section: Closing Remarks and Outlookmentioning

confidence: 97%

Advances in Ultra Low Dielectric Constant Ordered Porous Materials

et al. 2011

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“…342 A carbon-rich fluorocarbon material with k < 2 also has been reported. 372 The material is deposited by a plasma discharge of C 5 F 8 and Ar. It exhibits good adhesion to the SiCN barrier layer, and good thermal and mechanical properties.…”

Section: New Materialsmentioning

confidence: 99%

Plasma etching: Yesterday, today, and tomorrow

Donnelly¹,

Kornblit²

2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

676

422

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The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly,the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon,silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

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“…[13][14][15][16][17][18] In this new reactor, the deposited gases are supplied by a lower shower plate inserted in the diffusion plasma region. 13,15 The fluorocarbon film formed using the new reactor indicates not only a low dielectric constant but also low leakage current density, sufficient mechanical strength, strong adhesion, and good surface smoothness. 15 Therefore, the nonporous fluorocarbon film is proposed as the foreground ultralow-k film in advanced LSI devices.…”

mentioning

confidence: 99%

“…13,15 The fluorocarbon film formed using the new reactor indicates not only a low dielectric constant but also low leakage current density, sufficient mechanical strength, strong adhesion, and good surface smoothness. 15 Therefore, the nonporous fluorocarbon film is proposed as the foreground ultralow-k film in advanced LSI devices. Although the fluorocarbon film is expected to be stable for its structural advantage, a damageless process is anticipated to avoid dielectric constants change in subsequent process steps.…”

mentioning

confidence: 99%

Effect of Additives in Organic Acid Solutions for Post-CMP Cleaning on Polymer Low-k Fluorocarbon

Nemoto

Teramoto

et al. 2009

J. Electrochem. Soc.

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The appropriate post-chemical mechanical polishing ͑CMP͒ cleaning solution for an advanced nonporous polymer, ultralow-k fluorocarbon film is proposed. While decrease in fluorine content measured by high-resolution X-ray photoelectron spectroscopy and increase in dielectric constant were observed after additives cleaning with oxalic acid, no significant change of fluorine content and dielectric constant were found after citric acid with different additives and acids without additives cleanings. This reveals that additives play an important role in degradation of the fluorocarbon film. An appropriate selection of additives is important to clean the fluorocarbon film in post-CMP cleaning in advanced large-scale integrated generations. To complete successful integration of the post-CMP cleaning on new dielectric materials such as nonporous low-k fluorocarbon film, an appropriate solution and additives should be carefully selected to avoid electrical degradation in subsequent process.As technology node progresses, low-k dielectrics have been developed to reduce resistance-capacitance delay in large-scale integrated ͑LSI͒ circuits. Porous materials are being implemented as an ultralow-k dielectric for advanced LSI devices. It is reported that introduction of these porous low-k films in LSI fabrication brings difficulties and complexities due to their porous structure. 1-12 For example, delamination is reported to occur when copper on porous low-k dielectric is polished by chemical mechanical polishing ͑CMP͒. 6-10 Moreover, increase of dielectric constant is found when porous low-k dielectric is patterned by a dry etching process. 11,12 Alternative nonporous polymer fluorocarbon is considered an indispensable ultralow-k dielectric to avoid such complexity for LSI fabrication. [13][14][15] Microwave excited plasma using the radial line slot antenna with a dual-shower-plate structure reactor was developed to achieve a very low electron temperature ͑around 1-2 eV͒. [13][14][15][16][17][18] In this new reactor, the deposited gases are supplied by a lower shower plate inserted in the diffusion plasma region. 13,15 The fluorocarbon film formed using the new reactor indicates not only a low dielectric constant but also low leakage current density, sufficient mechanical strength, strong adhesion, and good surface smoothness. 15 Therefore, the nonporous fluorocarbon film is proposed as the foreground ultralow-k film in advanced LSI devices. Although the fluorocarbon film is expected to be stable for its structural advantage, a damageless process is anticipated to avoid dielectric constants change in subsequent process steps. A low-damage physical vapor deposition process was applied to reduce damage on the fluorocarbon. 19 The CMP and post-CMP processes are also of concern with regard to damage.In the cleaning process for devices of the 100 nm node and beyond, an ultraclean surface must be achieved without using strong chemical or mechanical forces. 20 A key solution to prevent contaminant redeposition is to make the best use o...

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Low-Dielectric-Constant Nonporous Fluorocarbon Films for Interlayer Dielectric

Cited by 22 publications

References 12 publications

Advances in Ultra Low Dielectric Constant Ordered Porous Materials

Advances in Ultra Low Dielectric Constant Ordered Porous Materials

Plasma etching: Yesterday, today, and tomorrow

Effect of Additives in Organic Acid Solutions for Post-CMP Cleaning on Polymer Low-k Fluorocarbon

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