Low‐Dimensional Lead‐Free Inorganic Perovskites for Resistive Switching with Ultralow Bias

Ge, Shuping; Guan, Xinwei; Wang, Yutao; Lin, Chun‐Ho; Cui, Yimin; Huang, Yunxia; Zhang, Xinran; Zhang, Ruoxuan; Yang, Xiaosong; Wu, Tom

doi:10.1002/adfm.202002110

Cited by 97 publications

(107 citation statements)

References 96 publications

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“…Recently, our group reported excellent RS devices in 0D Cs 3 Bi 2 I 9 and 2D CsBi 3 I 10 perovskites with high on/off ratios (≈10 6 ) and a very low operation potential (≈0.12 V). [ 309 ] These findings further enrich the material library of all‐inorganic lead‐free perovskite RS devices.…”

Section: Rs Memories Based On Halide Perovskitesmentioning

confidence: 82%

Halide Perovskites: A New Era of Solution‐Processed Electronics

et al. 2021

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Organic–inorganic mixed halide perovskites have emerged as an excellent class of materials with a unique combination of optoelectronic properties, suitable for a plethora of applications ranging from solar cells to light‐emitting diodes and photoelectrochemical devices. Recent works have showcased hybrid perovskites for electronic applications through improvements in materials design, processing, and device stability. Herein, a comprehensive up‐to‐date review is presented on hybrid perovskite electronics with a focus on transistors and memories. These applications are supported by the fundamental material properties of hybrid perovskite semiconductors such as tunable bandgap, ambipolar charge transport, reasonable mobility, defect characteristics, and solution processability, which are highlighted first. Then, recent progresses on perovskite‐based transistors are reviewed, covering aspects of fabrication process, patterning techniques, contact engineering, 2D versus 3D material selection, and device performance. Furthermore, applications of perovskites in nonvolatile memories and artificial synaptic devices are presented. The ambient instability of hybrid perovskites and the strategies to tackle this bottleneck are also discussed. Finally, an outlook and opportunities to develop perovskite‐based electronics as a competitive and feasible technology are highlighted.

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Section: Rs Memories Based On Halide Perovskitesmentioning

confidence: 82%

Halide Perovskites: A New Era of Solution‐Processed Electronics

et al. 2021

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“…Having said that, it is straightforward that different dimensionalities characterize Bi 3+ perovskites because of the different valences of bismuth and lead. XRD experiments showed that a 2D pattern characterizes the quite unusual CsBi 3 I 10 compound [78] with a bandgap of 1.77 eV. PV devices assembled using this harvester provide the best J sc of 3.4 mA cm −2 and V oc = 0.31 V for a CsI:BiI 3 precursor molar ratio 1:3.…”

Section: Bi and Other Halide Perovskitesmentioning

confidence: 93%

Halide Pb-Free Double–Perovskites: Ternary vs. Quaternary Stoichiometry

Palummo¹,

Varsano

Berrios

et al. 2020

Energies

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In view of their applicability in optoelectronics, we review here the relevant structural, electronic, and optical features of the inorganic Pb-free halide perovskite class. In particular, after discussing the reasons that have motivated their introduction in opposition to their more widely investigated organic-inorganic counterparts, we highlight milestones already achieved in their synthesis and characterization and show how the use of ab initio ground and excited state methods is relevant in predicting their properties and in disclosing yet unsolved issues which characterize both ternary and quaternary stoichiometry double-perovskites.

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“…[ 17 ] Their intrinsic properties are basically derived from the 3D ABX 3 perovskites with the additional quantum confinement effect. [ 18 ] On the other hand, the intrinsic properties of molecular low‐dimensional metal halides are different from those of the 3D counterparts and controlled by discrete metal halide species, such as polyhedrons, layers, or wires, separated from each other by organic cations [17a,19] . Strictly speaking, most molecular low‐dimensional metal halides should not be called “perovskites” because they do not have an ABX 3 or equivalent stoichiometry comprising a cubic structure of corner‐sharing BX octahedra.…”

Section: Introductionmentioning

confidence: 99%

One‐Dimensional Molecular Metal Halide Materials: Structures, Properties, and Applications

Rahaman

Lin

et al. 2021

Small Structures

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Metal halides with low‐dimensional molecular structures are the rising stars in the horizon of functional materials research. Among them, 1D metal halide hybrids are very promising for future optoelectronic applications because of their unusual photophysical properties resulting from strong quantum confinement. In the past few years, besides lead‐based 1D metal halide hybrids, research has been extended to lead‐free organic and all‐inorganic metal halides. Due to near‐unity photoluminescence quantum yield and excellent structural stability, all‐inorganic 1D metal halides are suitable for environmentally friendly optoelectronic devices. Moreover, the distortion and connectivity mode of metal halide octahedra arouse the formation of self‐trapped excitons within 1D metal halides, thus endowing the materials with distinct optical properties. Recent investigations have revealed many exciting characteristics of this new class of materials, such as ferroelectricity, ferromagnetism, optical cooling, and so on. This perspective presents not only structure–property correlations and recent applications of 1D metal halides but also the existing challenges and future research directions.

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Low‐Dimensional Lead‐Free Inorganic Perovskites for Resistive Switching with Ultralow Bias

Cited by 97 publications

References 96 publications

Halide Perovskites: A New Era of Solution‐Processed Electronics

Halide Perovskites: A New Era of Solution‐Processed Electronics

Halide Pb-Free Double–Perovskites: Ternary vs. Quaternary Stoichiometry

One‐Dimensional Molecular Metal Halide Materials: Structures, Properties, and Applications

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