Low‐Dimensional Metal‐Halide Perovskites as High‐Performance Materials for Memory Applications

Abstract

Metal‐halide perovskites have drawn profuse attention during the past decade, owing to their excellent electrical and optical properties, facile synthesis, efficient energy conversion, and so on. Meanwhile, the development of information storage technologies and digital communications has fueled the demand for novel semiconductor materials. Low‐dimensional perovskites have offered a new force to propel the developments of the memory field due to the excellent physical and electrical properties associated with the reduced dimensionality. In this review, the mechanisms, properties, as well as stability and performance of low‐dimensional perovskite memories, involving both molecular‐level perovskites and structure‐level nanostructures, are comprehensively reviewed. The property–performance correlation is discussed in‐depth, aiming to present effective strategies for designing memory devices based on this new class of high‐performance materials. Finally, the existing challenges and future opportunities are presented.

Inorganic Halide Perovskite Quantum Dots: A Versatile Nanomaterial Platform for Electronic Applications

“…The migration of these ionic defects is a double-edged sword for general perovskite-based electronics, causing hysteresis and poor stability in solar cells [180], while leading to resistance switching in memory devices [181][182][183][184]. Since metal halide perovskites possess a sensitive response to light, light excitation can be another parameter in addition to the electric field to effectively control the resistance states [185][186][187]. The mechanisms responsible for resistive switching effects in metal halide perovskites can be divided into several categories related to phenomena such as formation/rupture of filaments from electrodes, metal cationinduced filaments, ions migration, and trap-controlled spacecharge limited current (SCLC).…”

In situ vulcanization synthesis of CuInS2 nanosheet arrays for a memristor with a high on–off ratio and low power consumption

“…Despite their dimensionality, 2D copper chalcogenides could make a crucial difference in determining their properties and integration; [13][14][15] the electronic properties and applications of these materials have rarely been researched compared to their bulk or film forms. 14,[16][17][18] In view of the memristive properties, most 2D memristors possess a switching voltage larger than 1 V compared to copper chalcogenides. [19][20][21][22][23][24][25] In addition, the other reported 2D material memristors generally require either an active metal as the electrode to introduce external ions into electrolytes as switching species or tunable oxidation to obtain mobile species of ions/defects/grain boundaries depending on the switching mechanism.…”

Bipolar Switching Characteristics of Transparent WOX-Based RRAM for Synaptic Application and Neuromorphic Engineering

“…The non-volatile memory, one of the critical components, needs to meet the demand for high optical transmittance for transparent integrated circuit application. Among next-generation non-volatile memories, RRAM can meet the standards of high transparency and is a promising candidate due to its simple metal-insulator-metal (MIM) structure, low power consumption, high-density scalability, excellent memory performance (endurance and retention), fast data processing, and multi-level characteristics [ 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 ].…”