Low dislocation, semi-insulating In-doped GaAs crystals

Barrett, D.L.; McGuigan, S.; Hobgood, H. McD.; Eldridge, G.W.; Thomas, R.N.

doi:10.1016/0022-0248(84)90265-3

Cited by 52 publications

(5 citation statements)

References 3 publications

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“…The W-shape distribution with the peaks at the center, in the middle, and at the periphery of the substrate along its radius is clearly seen. Resembling W-shape dislocation distributions have been routinely observed during the growth of bulk crystals, for example, GaAs, but along the crystal diameter with density peaking at the periphery and at the center of the boule [18]. Confirmed by simulations the W-shape of the distribution in the bulk material is attributed to the plastic deformations caused by thermal stresses during after-growth cooling [19].…”

Section: Results Of the Xrd Measurementsmentioning

confidence: 55%

A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching

Ivantsov¹,

Volkova²

2012

ISRN Condensed Matter Physics

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It has been shown during the present study that the E-etching at elevated temperatures can be adopted for the dislocation etching in hydride vapor-phase epitaxy (HVPE) GaN layers. It has been found that the X-ray diffraction (XRD) evaluation of the dislocation density in the thicker than 6 μm epilayers using conventional Williamson-Hall plots and Dunn-Koch equation is in an excellent agreement with the results of the elevated-temperature E-etching. The dislocation distribution measured for 2-inch GaN-onsapphire substrate suggests strongly the influence of the inelastic thermal stresses on the formation of the final dislocation pattern in the epilayer.

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Section: Results Of the Xrd Measurementsmentioning

confidence: 55%

A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching

Ivantsov¹,

Volkova²

2012

ISRN Condensed Matter Physics

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“…In case of GaAs and InP materials, isoelectronic doping atoms cause a dramatic reduction in the dislocation density by pinning of dislocations at In atoms due to the large radius of In as compared to that of Ga [17]. In our case, such a pinning action shows that feature and also may withhold the generation of nitrogen antisite point defects.…”

Section: Resultsmentioning

confidence: 62%

Effect of Isoelectronic In Doping on Deep Levels in GaN Grown by MOCVD

Cho

Kim

Hong

et al. 2001

phys. stat. sol. (b)

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We have investigated the effect of isoelectronic In doping on deep levels in GaN films grown by metalorganic chemical vapor deposition via deep level transient spectroscopy. Deep level E2 0.5 eV below the conduction band was observed in both undoped GaN and In-doped GaN. However, with increasing In mole flow rate, the trap concentration of E2 decreases sharply from 2.3 Â 10 14 to 2.27 Â 10 13 cm --3 , nearly an order of magnitude in reduction, comparing to undoped GaN. This might be due to the dislocation pinning and/or bending effect. Therefore, In doping in GaN growth can effectively decrease the dislocation density and suppress the formation of deep levels E2.

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“…The results indicate a W-type dislocation density distribution across the diameter that can be observed as the etch pit density (EPD) in actual single crystals [47].…”

Section: Quantitative Methods For Dislocation Density Estimationmentioning

confidence: 97%

Solid mechanics and material strength studies on the melt growth of bulk single crystals

Miyazaki

2007

Journal of Crystal Growth

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Low dislocation, semi-insulating In-doped GaAs crystals

Cited by 52 publications

References 3 publications

A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching

A Comparative Study of Dislocations in HVPE GaN Layers by High-Resolution X-Ray Diffraction and Selective Wet Etching

Effect of Isoelectronic In Doping on Deep Levels in GaN Grown by MOCVD

Solid mechanics and material strength studies on the melt growth of bulk single crystals

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