Low-energy Ar+ ion beam induced chemical vapor deposition of silicon carbide films using dimethylsilane

Yoshimura, Satoru; Sugimoto, Satoshi; Takeuchi, Takae; Murai, Kensuke; Kiuchi, Masato

doi:10.1016/j.nimb.2022.07.016

Cited by 3 publications

(6 citation statements)

References 49 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In our previous study [ 35 ], we found that Ar + ion beam injection had an effect similar to the present sample (b). Ar + ion injection during CVD with DMS decreased the C/Si ratio to 1.36 [ 35 ]. The mass of Ar + ions (40 u) is similar to that of SiCH 5 + ions (45 u).…”

Section: Resultssupporting

confidence: 84%

“…Natural oxide layer of the Si (111) substrate was removed using diluted hydrogen fluoride before setting on the sample holder. In a previous experiment [ 35 ], we tried to form SiC films by CVD with DMS. When the substrate temperature was 800 °C, a crystalline SiC film was found to be formed on a Si substrate.…”

Section: Methodsmentioning

confidence: 99%

“…The C/Si composition ratio of methylsilane (H 3 SiCH 3 ) is 1 and agrees with that of stoichiometric SiC films. By contrast, the C/Si composition ratio of DMS (H 2 Si(CH 3 ) 2 ) is 2, it seems probable that in the previous experiments [ 31 , 35 , 36 ] excessive carbon atoms were actually supplied to the substrate. Senthil et al investigated the absorption kinetics of DMS at a Si substrate and they found enhanced C incorporation as compared with methylsilane by a factor of 1.5 [ 36 ].…”

Section: Introductionmentioning

confidence: 94%

“…Dimethylsilane (DMS) molecules also have both Si and C atoms. It was reported that SiC films could be produced using DMS [ [30] , [31] , [32] , [33] , [34] , [35] , [36] ]. When DMS was used for SiC film formations by thermal CVD, the atomic-concentration-ratio of carbon to silicon (C/Si ratio) was much greater than 1 (i.e., excessive carbon-inclusion in SiC) [ 31 , 35 , 36 ].…”

Section: Introductionmentioning

confidence: 99%

“…It was reported that SiC films could be produced using DMS [ [30] , [31] , [32] , [33] , [34] , [35] , [36] ]. When DMS was used for SiC film formations by thermal CVD, the atomic-concentration-ratio of carbon to silicon (C/Si ratio) was much greater than 1 (i.e., excessive carbon-inclusion in SiC) [ 31 , 35 , 36 ]. The C/Si composition ratio of methylsilane (H 3 SiCH 3 ) is 1 and agrees with that of stoichiometric SiC films.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane

Yoshimura

Sugimoto

Takeuchi

et al. 2023

Heliyon

Self Cite

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 84%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane

Yoshimura

Sugimoto

Takeuchi

et al. 2023

Heliyon

Self Cite

View full text Add to dashboard Cite

Low-energy Ar+ ion-beam-induced chemical vapor deposition of silicon dioxide films using tetraethyl orthosilicate

Yoshimura¹,

Sugimoto²,

Takeuchi³

et al. 2023

Heliyon

View full text Add to dashboard Cite

Silicon oxide film formation by spraying tetraethyl orthosilicate onto substrate with simultaneous low-energy SiO+ ion-beam irradiation

Yoshimura,

Sugimoto,

Takeuchi

et al. 2023

AIP Advances

View full text Add to dashboard Cite

We attempted to deposit silicon oxide films by spraying tetraethyl orthosilicate (TEOS) onto a substrate while the substrate was also irradiated with a low-energy SiO+ ion beam. The energy of the SiO+ ions was 55 eV, and the substrate temperature was 300 °C. Following this process, we were able to deposit a film on the substrate. X-ray photoelectron spectroscopy (XPS) measurements of the film showed that it was composed of silicon oxide. XPS analysis also showed that the oxygen-to-silicon atomic concentration ratio (O/Si ratio) for the film was 1.57. For comparison, an SiO+ ion beam was used to irradiate a substrate at room temperature with simultaneous spraying of TEOS. XPS analysis of the deposited film showed that it was silicon oxide with an O/Si ratio of 1.45. In this case, however, a relatively large number of carbon atoms (7 at. %) were incorporated into the film. In both the 300 °C and room-temperature cases, we confirmed that the film deposition rate was substantially improved by supplying TEOS during SiO+ ion-beam irradiation.

show abstract

Low-energy Ar+ ion beam induced chemical vapor deposition of silicon carbide films using dimethylsilane

Cited by 3 publications

References 49 publications

Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane

Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane

Low-energy Ar+ ion-beam-induced chemical vapor deposition of silicon dioxide films using tetraethyl orthosilicate

Silicon oxide film formation by spraying tetraethyl orthosilicate onto substrate with simultaneous low-energy SiO+ ion-beam irradiation

Contact Info

Product

Resources

About