Low energy electron diffraction study of the polar {111} surfaces of GaAs and GaSb

Rae, A. U. Mac

doi:10.1016/0039-6028(66)90005-7

Cited by 136 publications

(6 citation statements)

References 21 publications

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“…Figure 2(a) shows the LEED pattern from a (111)B GaAs surface that has been given a single 10 min heat clean at 560 "C. This is in good agreement with the (3 X 3) pattern observed by Jona (1966). As expected, the heat clean cycle gradually causes facetting of the surface (McRae 1966, Chen 1971) and after four heat cleans the original pattern has been completely replaced by the interleaved patterns from the (110) facet faces (see figure 2(b)). However as figure 2(c) shows, there is, within the limits of experimental error, no change in the value of E T .…”

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confidence: 81%

Mean transverse emission energy and surface topography on GaAs (Cs,O) photocathodes

Rodway

Bradley

1984

J. Phys. D: Appl. Phys.

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A study has been made of the relationship between the facetting and surface structure observed upon (111)B and (100)GaAs photocathode surfaces and the mean transverse emission energy of the photoelectrons emitted from these cathodes. It is concluded that the mean transverse emission is largely independent of the degree of facetting and the presence of surface structure; however, a relationship exists between the temperature at which the cathode surface is cleaned and the mean transverse emission energy.

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confidence: 81%

Mean transverse emission energy and surface topography on GaAs (Cs,O) photocathodes

Rodway

Bradley

1984

J. Phys. D: Appl. Phys.

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“…Another mechanism implies that several atoms covalently bonded within the material leave the surface as a whole. GaSb has a zinc-blende structure with a unit pattern consisting in a pyramid with a Ga surrounded by four Sb atoms and vice versa, which translates into each Sb atom being surrounded by a first shell of 4 Sb atoms [45]. The present investigation suggests that the formation of these cluster ions necessarily involves a combination of these two mechanisms, as both the temperature and electric field impact the observed abundance of cluster ions.…”

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confidence: 64%

Some aspects of the field evaporation behaviour of GaSb

Müller¹,

Saxey²,

Smith³

et al. 2011

Ultramicroscopy

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Molecular or cluster ions are often observed in the atom probe microanalysis of III-V compound semiconductors. Here, in-depth data analysis of a series of experiments on GaSb reveals strong variations in the mass spectrum, cluster ion appearance and multiplicity of the detector-events with respect to the effective electric field at the specimen surface. These variations are discussed in comparison with Al 6XXX series alloys and pure W and it is proposed that they may originate from field-dissociation of molecular ions, which might contribute to compositional inaccuracies. Abstract 2

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“…[31][32][33] This surface structure was later investigated by x-ray diffraction 34,35 and photoemission techniques. 36 The (2 × 2) reconstruction was also prepared by interdiffusion-assisted MBE of GaSb on Sb(111) surfaces.…”

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confidence: 99%

Analysis of GaSb and AlSb reconstructions on GaSb(111)A- andB-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction

et al. 2011

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The symmetry and existence ranges of GaSb and AlSb (111) A and B surface reconstructions are investigated using azimuthal-scan reflection high-energy electron diffraction (ARHEED) in a molecular-beam-epitaxy (MBE) environment. ARHEED patterns of all reconstructions within the accessible MBE group V flux-substrate temperature parameter field are presented and analyzed. The transition borders are mapped out as a reference for future growth experiments. The experimental results are interpreted on the basis of general construction principles for (111) surfaces of III-V semiconductors. ARHEED allows the complete determination of the two-dimensional in-plane reciprocal lattice in a single, continuous measurement. This allows the unambiguous identification of the reconstructions on (111) surfaces where the intrinsic symmetry is masked by the 120 • domain structure and possible disorder.

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Low energy electron diffraction study of the polar {111} surfaces of GaAs and GaSb

Cited by 136 publications

References 21 publications

Mean transverse emission energy and surface topography on GaAs (Cs,O) photocathodes

Mean transverse emission energy and surface topography on GaAs (Cs,O) photocathodes

Some aspects of the field evaporation behaviour of GaSb

Analysis of GaSb and AlSb reconstructions on GaSb(111)A- andB-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction

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