Low energy electron induced X-ray emission spectrometry (LEXES) and secondary ion mass spectrometry (SIMS) sensitivity studies to ultra shallow arsenic implants

Graoui, H.; Conti, G.; Hilkene, M.; McComb, B.; Tjandra, A.; Foad, M.A.; Kouzminov, D.; Hunter, Jerry; Hitzman, C. J.; Evans, C. A.

doi:10.1016/j.nimb.2005.05.010

Cited by 3 publications

(1 citation statement)

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“…The application of low-energy electron-induced X-ray emission spectrometry (LEXES) to ultra-shallow As implants revealed systematic underestimation of the implanted As dose when using SIMS analysis. 164 This resulted from As trapping in the upper layers of the sample. This contribution fell within the transient regime of the SIMS analysis and therefore was not accounted for properly.…”

Section: Quantitative Analysismentioning

confidence: 99%

Atomic spectrometry update. Atomic mass spectrometry

Bacon¹,

Linge

Parrish

et al. 2006

J. Anal. At. Spectrom.

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Section: Quantitative Analysismentioning

confidence: 99%

Atomic spectrometry update. Atomic mass spectrometry

Bacon¹,

Linge

Parrish

et al. 2006

J. Anal. At. Spectrom.

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Current literature in mass spectrometry

2006

J. Mass Spectrom.

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In order to keep subscribers up‐to‐date with the latest developments in their field, John Wiley & Sons are providing a current awareness service in each issue of the journal. The bibliography contains newly published material in the field of mass spectrometry. Each bibliography is divided into 11 sections: 1 Books, Reviews & Symposia; 2 Instrumental Techniques & Methods; 3 Gas Phase Ion Chemistry; 4 Biology/Biochemistry: Amino Acids, Peptides & Proteins; Carbohydrates; Lipids; Nucleic Acids; 5 Pharmacology/Toxicology; 6 Natural Products; 7 Analysis of Organic Compounds; 8 Analysis of Inorganics/Organometallics; 9 Surface Analysis; 10 Environmental Analysis; 11 Elemental Analysis. Within each section, articles are listed in alphabetical order with respect to author (4 Weeks journals ‐ Search completed at 12th. Apr. 2006)

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Characterization of an ultrashallow junction structure using angle resolved x-ray photoelectron spectroscopy and medium energy ion scattering

Saheli

Conti

Uritsky

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The control of dose and energy (and therefore depth distribution) of ion implantation in n-channel MOSFET (NMOS) ultrashallow junctions is vital. Therefore there is a need to provide reliable metrology. Since the standard sheet resistance probing method, and the dynamic secondary ion mass spectroscopy method used to calibrate it both become more problematic for very shallow junctions, other techniques need to be evaluated. Angle resolved x-ray photoelectron spectroscopy (AR-XPS) is investigated here as an additional, nondestructive, laboratory-based tool to characterize NMOS junctions. The arsenic depth distribution and chemical bonding configuration are investigated for a set of p-type wafers implanted at 2keV with nominal doses from 1×1015to2×1015at.∕cm2. The results are compared to those using medium energy ion scattering (MEIS). It is demonstrated that XPS is a useful nondestructive tool for obtaining dopant chemical bonding state, qualitative elemental and chemical state depth information without modeling, and quantitative information on overlayer film thickness. Modeling the AR-XPS data and comparison to trial depth structures can lead to a more quantitative, but crude, depth profile. The combination of AR-XPS and MEIS was also able to explain why secondary ion mass spectroscopy profiling measures an approximately 2% increase for 1×1015at.∕cm2 in apparent dose on annealing the arsenic as-implanted wafer.

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Low energy electron induced X-ray emission spectrometry (LEXES) and secondary ion mass spectrometry (SIMS) sensitivity studies to ultra shallow arsenic implants

Cited by 3 publications

References 1 publication

Atomic spectrometry update. Atomic mass spectrometry

Atomic spectrometry update. Atomic mass spectrometry

Current literature in mass spectrometry

Characterization of an ultrashallow junction structure using angle resolved x-ray photoelectron spectroscopy and medium energy ion scattering

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