No abstract

The main challenges for PMOS ultra shallow junction formation remain the transient enhanced diffusion (TED) and the solid solubility limit of boron in silicon. It has been demonstrated that low energy boron implantation and spike annealing are key in meeting the 90 nm technology node ITRS requirements. To meet the 65 nm technology requirements many studies have used fluorine co-implantation with boron and Si + or Ge + pre-amorphization (PAI) and spike annealing. Although using BF + 2 can be attractive for its high throughput, self-amorphization and the presence of fluorine, many studies have shown that for the fluorine to successfully reduce TED its energy needs to be well optimized with respect to the boron's, therefore BF + 2 does not present the right fluorine/boron energy ratio for the optimum junction formation. In this work we optimize the fluorine energy when a deep or shallow PAI is used. We also demonstrate that the fluorine dose needs to be carefully optimized otherwise a reverse effect can be observed. We will also show that the optimized junction depends less on the Ge + energies between 2 keV and 20 keV and when HF etch is implemented after Ge + PAI, improvements in both the junction depth and the sheet resistance are observed.

No abstract

No abstract

In-situ particle monitors offer significant benefits in cost of ownership for ion implant applications. Particle excursions and out-of-control conditions are detected and alarmed as they occur, minimizing the potential for scrapping future product runs. Applied Materials are now qualifying an advanced technology in-situ particle sensor for the xR80 series and W O O S (9500 series) implanters. Utilizing Particle Measuring Systems, Inc. technology, this system directly addresses the historical limitations with in-situ particle monitors. Electronic and thermally sensitive components are kept out of the processor chamber. Very high optical power is generated in the sensor, detecting particles as small as 0.08 pm at velocities up to10 d s . Testing to date indicates this sensor offers excellent performance in monitoring particle excursions and a good correlation to small particles counted on wafers.