Low energy response of silicon pn-junction detector

Hartmann, R.; Hauff, D.; Lechner, P.; Richter, R.; Strüder, L.; Kemmer, J.; Krisch, S.; Scholze, Frank; Ulm, G.

doi:10.1016/0168-9002(96)00254-9

Cited by 64 publications

(23 citation statements)

References 9 publications

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“…For the very best energy resolution at lower count rates, longer shaping time constants up to 450 nsec can be used. The radiation entrance window allows the detection of soft X-rays 23,24 ; the quantum efficiency is above 90% in the energy range from 300 eV up to 10 keV. The quantum efficiency at high energy will increase in the next generation of SDDs, which will be made from 500 m thick material.…”

Section: Silicon Drift Detectors: Current Performancementioning

confidence: 98%

XTRA: the fast x-ray timing detector on XEUS

Barret¹,

Médale²,

Rohde³

et al. 2004

High-Energy Detectors in Astronomy

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The Rossi X-ray Timing Explorer (RXTE) has demonstrated the power of observations in the time domain in the study of X-ray binaries. The dynamical variation of the X-ray emission from accreting neutron stars and stellar mass black holes is a powerful probe of their strong gravitational fields. At the same time, oscillations at the neutron star spin frequency during X-ray bursts have been used to set important constraints on the mass and radius of neutron stars. The X-ray Evolving Universe Spectroscopy mission (XEUS), the potential follow-on mission to XMM−Newton, will have a mirror aperture more than ten times larger than the effective area of the RXTE proportional counter array (RXTE/PCA). Combined with a small dedicated fast X-ray timing detector in the focal plane (XTRA: XEUS Timing for Relativistic Astrophysics), this collecting area will provide a leap in timing sensitivity of more than one order of magnitude over the RXTE/PCA for bright sources, and will open a brand new window on faint X-ray sources, owing to the negligible detector background. Furthermore, the use of advanced Silicon drift chambers will improve the energy resolution by a factor of ∼ 6 over the RXTE/PCA. The spectroscopic diagnostics of the strong field region, such as the gravitational redshift and the relativistic broadening of the Iron line, will become exploitable simultaneous with the fast timing. XTRA will provide unique opportunities, enabling for example the testing of general relativity in the strong gravity field regime and investigating with unprecedented accuracy the equation of state of matter at supranuclear density. XTRA when observing bright X-ray sources will record typically several hundred thousand counts per second and careful design will be necessary to ensure that the full potential of these data can be exploited. We describe the proposed implementation of XTRA in the XEUS focal plane using Silicon drift detectors and present the current performance of these devices.

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Section: Silicon Drift Detectors: Current Performancementioning

confidence: 98%

XTRA: the fast x-ray timing detector on XEUS

Barret¹,

Médale²,

Rohde³

et al. 2004

High-Energy Detectors in Astronomy

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“…The idea was to place an additional phosphorus implant directly behind the boron implant in order to compensate for the tail portion of the boron doping profile. The net boron ion distribution results in a thinner "dead" silicon layer and an elevated electric field [2,3] near the silicon surface.…”

Section: Simulationmentioning

confidence: 99%

Comparison of two different methods to produce thin-window silicon drift detectors

Řehák¹,

Chen²,

Carini³

et al. 2009

2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC)

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We have developed a new method to produce thin-entrance-window Silicon Drift Detectors. To produce the desired thin-entrance-window a double implantation was used. This implantation consists of Boron ions (dose of 1x10 14 /cm 2 at 10 keV) plus a second implant of Phosphorus ions (with a dose of 4x10 12 /cm 2 at 50 keV or dose of 9x10 11 /cm 2 at 80 keV) through 500 ǖ of silicon dioxide. The second Phosphorus implantation compensates for the tail portion of the Boron ion implantation, so that the net Boron ion distribution will result in a thinner "dead" silicon layer and an elevated electric field near the silicon surface. We will compare test results from this newly developed thin-window with those from our previous development, where the thin junction was created using a single implantation of Boron ions (dose of 1x10 14 /cm 2 at 10 keV) through a 500 Å thick silicon dioxide. All testing was done in the U3C beam line at

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“…Due to the total depletion of the bulk the DEPFET APS is illuminated through the uniform, non-structured backside. The low-energy response is given by the shallow p-implanted entrance window with an effective thickness smaller than 15 nm and an efficiency of 80 % at the C-K line (277 eV) 18,19 .…”

Section: Active Pixel Sensormentioning

confidence: 99%

XEUS wide-field imager: first experimental results with the x-ray active pixel sensor DEPFET

et al. 2004

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A new type of Active Pixel Sensor is proposed which will be capable to meet the requirements of the wide field imager of ESA's future X-ray mission XEUS: the simultaneous energy and position resolved detection of X-rays at high count rate on a large format sensor. The Active Pixel Sensor is based on the integrated detector-amplifier structure DEpleted P-channel Field Effect Transistor (DEPFET). The device operates on a fully depleted bulk and provides internal signal amplification at the position of the charge generation. A very low value of the overall output capacitance leads to extremely low read noise. In the matrix arrangement of an Active Pixel Sensor the single DEPFET pixels can be randomly accessed for readout, and various flexible readout modes are possible. In contrast to CCDs the DEPFET-based Active Pixel Sensor avoids the transfer of signal charges over long distances within the detector bulk, and related problems of transfer loss or out-of-time-events cannot occur. An interesting feature is the non-destructive nature of the DEPFET readout which can be used for the reduction of the low-frequency noise contribution by repetitive readings of the signal information. The device principle of the DEPFET based pixel sensor is explained. First results of single DEPFET measurements are presented. THE XEUS MISSIONThe X-ray Evolving Universe Spectroscopy (XEUS) mission is a potential follow-on mission to the XMM-Newton satellite and currently under study within the European Space Agency's (ESA) Horizon 2000+ program. The aim of XEUS is to operate a permanent satellite observatory for the X-ray energy band from 100 eV to 30 keV with a telescope aperture equivalent to the largest ground based optical telescopes, i.e. in the order of 10 m 2 . XEUS will be the first instrument to perform detailed imaging spectroscopic studies of some of the unresolved issues of high-energy astrophysics concerning the early stage of the universe. Among the scientific goals are the study of first massive black holes, the formation of first gravitationally bound galaxy groups and their development towards clustering, and the evolution of chemical element synthesis 1 . The initial mission configuration will consist of a mirror spacecraft (MSC) with an effective area of 6 m 2 at 1 keV and a separate detector spacecraft (DSC) 2 . The two spacecrafts are aligned by active control at a focal length of 50 m with a relative accuracy of 1 mm 3 . After several years of operation XEUS will dock to the International Space Station (ISS) where the MSC will be upgraded to an effective area of 30 m 2 at 1 keV by the robotic mounting of additional mirror segments 3 . A new detector spacecraft with advanced sensor technology will then replace the DSC. The launch of XEUS will be presumably in 2015. With the potentialities of the ISS for mirror extension, and with the option of detector substitution the mission lifetime may be well over a quarter of a century. The XEUS focal plane instrumentation will consist of two Narrow Field Imagers (NFIs) and a Wide...

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Low energy response of silicon pn-junction detector

Cited by 64 publications

References 9 publications

XTRA: the fast x-ray timing detector on XEUS

XTRA: the fast x-ray timing detector on XEUS

Comparison of two different methods to produce thin-window silicon drift detectors

XEUS wide-field imager: first experimental results with the x-ray active pixel sensor DEPFET

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