Low Energy X-Ray and $\gamma$-Ray Detectors Fabricated on n-Type 4H-SiC Epitaxial Layer

Mandal, Krishna C.; Muzykov, Peter G.; Chaudhuri, Sandeep K.; Terry, J. R.

doi:10.1109/tns.2013.2273673

Cited by 55 publications

(26 citation statements)

References 21 publications

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“…The former trap concentration was assumed to be the total trap concentration considering traps corresponding to step 1 were emptied at = 0. From a similar study on a n-type (n-M50) sample, the variation of barrier height as a function of temperature was investigated [17]. It was observed that Ni on 4H-SiC epitaxial layer formed a typical Schottky junction.…”

Section: Electrical Measurements On Si and N-type Epitaxial Layersmentioning

confidence: 99%

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

2020

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Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environment application have been studied extensively and reviewed in this article. The miniaturized devices were developed at the University of South Carolina (UofSC) on 8 × 8 mm 4H-SiC epitaxial layer wafers with an active area of ≈11 mm2. The thicknesses of the actual epitaxial layers were either 20 or 50 µm. The article reviews the investigation of defect levels in 4H-SiC epilayers and radiation detection properties of Schottky barrier devices (SBDs) fabricated in our laboratories at UofSC. Our studies led to the development of miniature SBDs with superior quality radiation detectors with highest reported energy resolution for alpha particles. The primary findings of this article shed light on defect identification in 4H-SiC epilayers and their correlation with the radiation detection properties.

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Section: Electrical Measurements On Si and N-type Epitaxial Layersmentioning

confidence: 99%

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

2020

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“…[8][9][10] However, intrinsic defects and impurity related complexes have been reported in as-grown SiC epilayers as well. 11,12 Many of these defects are electrically active and can lead to increased detector leakage current and poor carrier lifetime and mobility by acting as trap or recombination/generation centers. The electrically active defects may lead to charge loss or detector output pulse with large rise times leading to incomplete charge collection.…”

Section: à2mentioning

confidence: 99%

Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

Chaudhuri

Nguyen

Mandal

2014

Journal of Applied Physics

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Spectroscopic performance of Schottky barrier alpha particle detectors fabricated on 50 lm thick n-type 4H-SiC epitaxial layers containing Z 1/2 , EH 5 , and Ci1 deep levels were investigated. The device performance was evaluated on the basis of junction current/capacitance characterization and alpha pulse-height spectroscopy. Capacitance mode deep level transient spectroscopy revealed the presence of the above-mentioned deep levels along with two shallow level defects related to titanium impurities (Ti(h) and Ti(c)) and an unidentified deep electron trap located at 2.4 eV below the conduction band minimum, which is being reported for the first time. The concentration of the lifetime killer Z 1/2 defects was found to be 1.7 Â 10 13 cm À3. The charge transport and collection efficiency results obtained from the alpha particle pulse-height spectroscopy were interpreted using a drift-diffusion charge transport model. Based on these investigations, the physics behind the correlation of the detector properties viz., energy resolution and charge collection efficiency, the junction properties like uniformity in barrier-height, leakage current, and effective doping concentration, and the presence of defects has been discussed in details. The studies also revealed that the dominating contribution to the charge collection efficiency was due to the diffusion of charge carriers generated in the neutral region of the detector. The 10 mm 2 large area detectors demonstrated an impressive energy resolution of 1.8% for 5486 keV alpha particles at an optimized operating reverse bias of 130 V. V C 2014 AIP Publishing LLC. [http://dx

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“…Applications of silicon based photodiodes for UV and low-energy X-ray detection [1][2][3][4] are limited in environments with high infrared background, such as in most medical and space applications. [5][6][7] Wide bandgap GaP makes it highly transparent to the infrared radiations and also implies high threshold responsivity and low thermally induced noises which are prerequisites for efficient UV and low energy X-ray detection and imaging.…”

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Deep Level Studies in High-Resistive Gallium Phosphide Single Crystals

Das

Chaudhuri

Mandal

2015

ECS J. Solid State Sci. Technol.

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In an attempt to explore the possibility of using wide bandgap gallium phosphide (GaP) single crystals as radiation detectors, high resistivity iron (Fe)-doped GaP single crystal was grown using a solid state diffusion (SSD) technique. The grown ingot showed a resistivity in the order of 10 8 -cm with an optical bandgap of 2.27 eV measured at room temperature. Schottky barrier diodes were fabricated by sputtering nickel (Ni) contacts on GaP wafers to study the deep level defects and junction properties. An effective donor concentration, N d = 2.6 × 10 16 cm −3 was calculated from the capacitance-voltage measurements. Deep level transient spectroscopy (DLTS) and current transient spectroscopy (CTS) were performed on the Schottky diodes to identify the electrically active defect levels in the grown high-resistive GaP crystals. DLTS measurements revealed the presence of several vacancies, impurities, and antisite defects centers with concentrations ranging from 10 14 -10 16 cm −3 . CTS measurements identified a new defect level in GaP crystals that could not be detected by the conventional DLTS scan due to very fast capacitance transients at temperatures below 100 K.

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Low Energy X-Ray and $\gamma$-Ray Detectors Fabricated on n-Type 4H-SiC Epitaxial Layer

Cited by 55 publications

References 21 publications

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

Deep Level Studies in High-Resistive Gallium Phosphide Single Crystals

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