Low-Field Mobility in Strained Silicon with `Full Band' Monte Carlo Simulation using k.p and EPM Bandstructure

Feraille, M.; Rideau, D.; Ghetti, A.; Poncet, A.; Tavernier, C.; Jaouen, H.

doi:10.1109/sispad.2006.282886

Cited by 7 publications

(3 citation statements)

References 9 publications

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“…Phonon scattering for electrons and holes has been extensively calibrated to reproduce a large variety of experiments including strain dependent mobility [24], [38]. As example, the calculated electron bulk mobility is shown in Fig.…”

Section: B Strain Dependent Band Structure and Scatteringmentioning

confidence: 99%

Coupled Mechanical and 3-D Monte Carlo Simulation of Silicon Nanowire MOSFETs

Ghetti

Carnevale

Rideau

2007

IEEE Trans. Nanotechnology

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In this paper we report on a general methodology to investigate nanowire MOSFETs based on the coupling of mechanical simulation with 3-D real-space Monte Carlo simulation. The Monte Carlo transport model accounts for both strain silicon and quantum mechanical effects. Mechanical strain effects are accounted for through an appropriate change of the anisotropic band structure computed with the empirical pseudopotential method. Quantum effects are instead included by means of a quantum mechanical correction of the potential coming from the self-consistent solution of the Schrödinger equation. This methodology has been then applied to the simulation of a test case silicon nanowire n-MOSFET. Impact of mechanical strain and quantum effects on the drive current is investigated. It is shown that only the inclusion of strain and quantum mechanical effects allows a good agreement with experimental data, demonstrating the validity of the proposed methodology for ultimate devices.Index Terms-Monte Carlo simulation, nanowire MOSFET, quantum effects, strained silicon.

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Section: B Strain Dependent Band Structure and Scatteringmentioning

confidence: 99%

Coupled Mechanical and 3-D Monte Carlo Simulation of Silicon Nanowire MOSFETs

Ghetti

Carnevale

Rideau

2007

IEEE Trans. Nanotechnology

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“…The traditional method requires the calculation and storage of the band structure of the material on the full Brillouin zone (BZ). This is done through various methods such as the k•p method, 1 the Empirical Pseudopotential method (EPM), 2 the empirical Tight Binding method (ETB), 3 etc. The calculation of the scattering rate is usually done using Fermi's golden rule for every initial state k to final state k 0 .…”

Section: Introductionmentioning

confidence: 99%

Modeling of multi-band drift in nanowires using a full band Monte Carlo simulation

Hathwar

Saraniti

Goodnick

2016

Journal of Applied Physics

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We report on a new numerical approach for multi-band drift within the context of full band Monte Carlo (FBMC) simulation and apply this to Si and InAs nanowires. The approach is based on the solution of the Krieger and Iafrate (KI) equations [J. B. Krieger and G. J. Iafrate, Phys. Rev. B 33, 5494 (1986)], which gives the probability of carriers undergoing interband transitions subject to an applied electric field. The KI equations are based on the solution of the time-dependent Schr€ odinger equation, and previous solutions of these equations have used Runge-Kutta (RK) methods to numerically solve the KI equations. This approach made the solution of the KI equations numerically expensive and was therefore only applied to a small part of the Brillouin zone (BZ). Here we discuss an alternate approach to the solution of the KI equations using the Magnus expansion (also known as "exponential perturbation theory"). This method is more accurate than the RK method as the solution lies on the exponential map and shares important qualitative properties with the exact solution such as the preservation of the unitary character of the time evolution operator. The solution of the KI equations is then incorporated through a modified FBMC freeflight drift routine and applied throughout the nanowire BZ. The importance of the multi-band drift model is then demonstrated for the case of Si and InAs nanowires by simulating a uniform field FBMC and analyzing the average carrier energies and carrier populations under high electric fields. Numerical simulations show that the average energy of the carriers under high electric field is significantly higher when multi-band drift is taken into consideration, due to the interband transitions allowing carriers to achieve higher energies. Published by AIP Publishing.

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“…Bellotti et al (2007) and Goano et al (2007) for its application to ternary III-N alloys and to wurtzite ZnO, respectively), and the "full zone" k · p method (see e.g. Bailey et al (1990);Feraille et al (2006)). …”

Section: Introductionmentioning

confidence: 99%

Ab initio, nonlocal pseudopotential, and full-zone $${k \cdot p}$$ computation of the electronic structure of wurtzite BeO

et al. 2008

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Ab initio computations of the structural and electronic properties of wurtzite BeO have been performed with the codes of the abinit project, and the resulting band structure has been approximated with the nonlocal empirical pseudopotential method and a new full-zone k · p model using two expansion points ( and L). The very good overall quality demonstrated by both empirical approaches should allow their application to the accurate yet numerically efficient description of the electronic structure of the BeZnO materials system.

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Low-Field Mobility in Strained Silicon with `Full Band' Monte Carlo Simulation using k.p and EPM Bandstructure

Cited by 7 publications

References 9 publications

Coupled Mechanical and 3-D Monte Carlo Simulation of Silicon Nanowire MOSFETs

Coupled Mechanical and 3-D Monte Carlo Simulation of Silicon Nanowire MOSFETs

Modeling of multi-band drift in nanowires using a full band Monte Carlo simulation

Ab initio, nonlocal pseudopotential, and full-zone $${k \cdot p}$$ computation of the electronic structure of wurtzite BeO

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