Low-field negative magnetoresistance in the variable-range-hopping regime in copper indium diselenide

Essaleh, L.; Galibert, J.; Wasim, S. M.; Hernández, E.; Leotin, J.

doi:10.1103/physrevb.50.18040

Cited by 35 publications

(22 citation statements)

References 24 publications

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“…In this case, three possible mechanisms, that is, nearest neighbor hopping with ln r / 1/T, variable range hopping of Mott type with ln r / 1/T 1/4 and Efros-Shklovskii type where lnr / 1/T 1/2 are expected to dominate in different temperature ranges [16], but not necessarily all of them in the same sample. From the analysis of the data, not shown here and in details published elsewhere [17,18], the exponent s in ln r / 1/T s was found to be very close to unity. Hence, the data below 110 K in Fig.…”

Section: Electrical Resistivity and Carrier Concentrationsupporting

confidence: 54%

“…For S-2, on the contrary, m h increases with increasing T, from about 5 to 50 cm 2 /Vs, in the whole temperature range. It is also interesting to note that m e for S-1 is lower by at least one order of magnitude as compared to that observed in n-type CuInSe 2 which varies from about 10 2 to 1.5 Â 10 3 cm 2 / Vs [18][19][20]. This behavior is strongly indicative of the scattering of the charge carriers in the ODCs by a mechanism that is not found in the large number of both n and p-type samples of CuInSe 2 studied in Ref.…”

Section: Carrier Mobilitymentioning

confidence: 78%

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Electrical Properties of the Ordered Defect Compound CuIn3Se5

Wasim

Rincón

Marín

2002

phys. stat. sol. (a)

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The electrical properties of n and p‐type bulk samples of CuIn3Se5 have been studied in the temperature range from 80 to 300 K. From the analysis of the temperature dependence of electron and hole concentrations in the activation regime above 110 K, the activation energy and the density of states effective mass of the charge carriers are estimated to be 36 meV and 0.13me for n‐type samples, and 28 meV and 1.07me for p‐type samples, respectively. The relatively low value of the carrier concentration in n‐CuIn3Se5 and the value in p‐CuIn3Se5 being of the same magnitude as in CuInSe2 confirms that this compound is formed due to the presence of ordered arrays of electrically inactive donor–acceptor defect pairs (2 VCu1— + InCu2+). Below 110 K, the electrical conduction in the impurity band is due to nearest neighbor hopping mechanism. The relatively low magnitude of the electron mobility and its temperature dependence in the activation regime is explained by considering, in addition to the well‐established scattering processes, a mechanism that involves the scattering of the charge carriers by ordered arrays of donor–acceptor defect pairs. At lower temperatures, the variation of the mobility is explained by taking into account the theoretical model for the thermally activated nearest neighbor hopping of the charge carriers between localized states in the impurity band.

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Section: Electrical Resistivity and Carrier Concentrationsupporting

confidence: 54%

Section: Carrier Mobilitymentioning

confidence: 78%

Electrical Properties of the Ordered Defect Compound CuIn3Se5

Wasim

Rincón

Marín

2002

phys. stat. sol. (a)

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“…(3) on many insulating materials. The authors found consistent results with theoretical predictions of quantum interference in the two VRH regimes of Mott and of Efros-Shklovskii [20,21,[32][33][34]. For…”

Section: Results Discussion and Conclusionsupporting

confidence: 78%

“…Quadratic NMR with magnetic field has been observed experimentally in the VRH regime in a number of insulating materials [18][19][20][21][22]. Schirmacher [23] have had proposed another analysis of NMR in presence of VRH regime using the following expression:…”

Section: Quantum Interferencementioning

confidence: 99%

NEGATIVE MAGNETORESISTANCE BEHAVIOURS AND LOCALIZED MAGNETIC MOMENTS IN INSULATING CdSe SEMICONDUCTOR AT VERY LOW TEMPERATURES WITH MAGNETIC FIELD

kaaouachi¹,

Abdia²,

Nafidi³

et al. 2010

AIP Conference Proceedings

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“…The physical explanation lies in the fact that the magnitude of the parameters r 0 , T 0 and s changes with the change in the conduction mechanism with the crossover. Now, the temperature range being identified, to get with more accuracy the parameters r 0 , s and T 0 , we have opted for the ªmethod of percentage deviationº used earlier by us [19] and Finlayson [20], consisting in varying the value of s and then fitting the experimental data to the VRH law r r 0 exp (T 0 /T) s with r 0 and T 0 as adjustable parameters. The best value of s is obtained by minimizing the least-square deviation By this way the characteristic hopping parameters s, r 0 , T Mott and T ES (T 0 is replaced by T Mott and T ES for the two types of conduction) have been calculated.…”

Section: Resultsmentioning

confidence: 99%